Oxygen diffusion and reaction at annealed InSb MOS interfaces

Keyphrases

• Oxygen Diffusion 100%
• Annealing 100%
• InSb 100%
• Oxide-semiconductor Interfaces 100%
• Oxygen Reaction 100%
• Metal Oxide Semiconductor 100%
• Metal-oxide-semiconductor Structure 66%
• Capacitance-voltage Curve 66%
• Low Temperature 33%
• High-resolution 33%
• Oxides 33%
• Electrical Properties 33%
• Electronic Properties 33%
• Depth Profiling 33%
• Heat Treatment 33%
• In-diffusion 33%
• Auger Electron Spectroscopy 33%
• Spatial Position 33%
• Surface Charge 33%
• Chemical Properties 33%
• Elevated Temperature 33%
• Active Species 33%
• Deconvolution Method 33%
• Oxide Layer 33%
• Relative Position 33%
• Layered Structure 33%
• Oxide Interfaces 33%
• Surface States 33%
• Layer Composition 33%
• Heat Treatment Effect 33%
• Oxidation State 33%
• Line Shape Analysis 33%
• Annealing Temperature 33%
• Electrical Characteristics 33%
• Flat-band Voltage 33%
• Interface State Density 33%
• Oxide Traps 33%
• Passivation Film 33%
• Voltage Hysteresis 33%
• Fixed Oxide Charge 33%

Engineering

• Metal Oxide Semiconductor 100%
• Heat Treatment 66%
• Semiconductor Structure 66%
• Low-Temperature 33%
• High Resolution 33%
• Charge Density 33%
• Passivation 33%
• Elevated Temperature 33%
• Relative Position 33%
• Oxide Layer 33%
• Line Shape 33%
• Surface State 33%
• Interface State 33%
• Deconvolution 33%
• Shape Analysis 33%
• Layer Structure 33%
• Spatial Position 33%
• Annealing Temperature 33%
• Anodization 33%
• Hysteresis Voltage 33%

Material Science

• Oxide Compound 100%
• Metal Oxide 100%
• Oxide Semiconductor 100%
• Density 50%
• Heat Treatment 50%
• Capacitance 50%
• Semiconductor Structure 50%
• Film 25%
• Annealing 25%
• Oxidation Reaction 25%
• Electronic Property 25%
• Auger Electron Spectroscopy 25%
• Chemical Property 25%
• Lineshape 25%
• Oxide Interface 25%
• Anodizing 25%