TY - JOUR
T1 - Oxide and interface properties of plasma-grown and wet anodic oxides of InSb metal/oxide/semiconductor devices
AU - Bregman, J.
AU - Shapira, Yoram
AU - Calahorra, Z.
AU - Goshen, R.
N1 - Funding Information:
The authors are indebted to Mrs. M. Bench and Mr. M. Weinstock for their help with computer programming and to Mr. J. Shtatlander for his help with the AES measurements. One of us (Y.S.) is grateful to the Belfer Centre for Energy Research and the Israel Ministry of Energy for their support.
PY - 1985/3/22
Y1 - 1985/3/22
N2 - We studied and compared InSb oxides, grown by plasma and anodic processes, using capacitance-voltage measurements and high resolution Auger electron spectroscopy (AES). We developed a method for analysing the AES line shapes, peak positions and ratios of the various elements as a function of depth in the oxides. The analyses provide detailed new information on the oxide layer structure and composition (e.g. interface widths and boundaries) and on changes in the chemical bonding. On the basis of investigations of a large number of samples, we find that the two oxidation processes produce similar films comprising mixed oxides with a defined In2O3-to-Sb2O3 ratio of 1:3. The In2O3In and Sb2O3Sb interfaces overlap but do not coincide, with the former usually being wider and closer to the substrate than the latter. This partial overlap indicates a distinct antimony-rich indium oxide interface which may dominate the electronic properties of the metal/ oxide/semiconductor structures. The AES characteristics are in turn related to the observed electronic properties.
AB - We studied and compared InSb oxides, grown by plasma and anodic processes, using capacitance-voltage measurements and high resolution Auger electron spectroscopy (AES). We developed a method for analysing the AES line shapes, peak positions and ratios of the various elements as a function of depth in the oxides. The analyses provide detailed new information on the oxide layer structure and composition (e.g. interface widths and boundaries) and on changes in the chemical bonding. On the basis of investigations of a large number of samples, we find that the two oxidation processes produce similar films comprising mixed oxides with a defined In2O3-to-Sb2O3 ratio of 1:3. The In2O3In and Sb2O3Sb interfaces overlap but do not coincide, with the former usually being wider and closer to the substrate than the latter. This partial overlap indicates a distinct antimony-rich indium oxide interface which may dominate the electronic properties of the metal/ oxide/semiconductor structures. The AES characteristics are in turn related to the observed electronic properties.
UR - http://www.scopus.com/inward/record.url?scp=0021400874&partnerID=8YFLogxK
U2 - 10.1016/0040-6090(85)90243-3
DO - 10.1016/0040-6090(85)90243-3
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AN - SCOPUS:0021400874
SN - 0040-6090
VL - 125
SP - 347
EP - 353
JO - Thin Solid Films
JF - Thin Solid Films
IS - 3-4
ER -