Oxide and interface properties of plasma-grown and wet anodic oxides of InSb metal/oxide/semiconductor devices

J. Bregman*, Yoram Shapira, Z. Calahorra, R. Goshen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

We studied and compared InSb oxides, grown by plasma and anodic processes, using capacitance-voltage measurements and high resolution Auger electron spectroscopy (AES). We developed a method for analysing the AES line shapes, peak positions and ratios of the various elements as a function of depth in the oxides. The analyses provide detailed new information on the oxide layer structure and composition (e.g. interface widths and boundaries) and on changes in the chemical bonding. On the basis of investigations of a large number of samples, we find that the two oxidation processes produce similar films comprising mixed oxides with a defined In2O3-to-Sb2O3 ratio of 1:3. The In2O3In and Sb2O3Sb interfaces overlap but do not coincide, with the former usually being wider and closer to the substrate than the latter. This partial overlap indicates a distinct antimony-rich indium oxide interface which may dominate the electronic properties of the metal/ oxide/semiconductor structures. The AES characteristics are in turn related to the observed electronic properties.

Original languageEnglish
Pages (from-to)347-353
Number of pages7
JournalThin Solid Films
Volume125
Issue number3-4
DOIs
StatePublished - 22 Mar 1985

Funding

FundersFunder number
Belfer Centre for Energy Research
Israel Ministry of Energy

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