Oxidation and thermal stability of thin film copper layers

Y. Shacham-Diamand*, J. Li, J. O. Olowlafe, S. Russel, Y. Tamou, J. W. Mayer

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The authors present several aspects of the thermal stability of thin-film copper layers. The copper oxidation experiment and the copper reaction with silicon and barrier layers were conducted separately. Copper oxidation has been characterized and its seems to be a major source of reliability problems. A qualitative model can be assigned to the copper oxidation which assumes an initial Cu2O growth at random sites. The coalescence of those sites to form an oxide layer occurs after certain time. The formed oxide may limit the oxidation of the underlying copper and the process becomes diffusion controlled. At high temperatures (>255°C) the oxide nucleation consumes most of the copper layer and no diffusion regime is observed. TiN, Cr, and Co were found to be non-reacting at typical processing temperatures. TiN seems to be superior since it does not react with copper and even at 550°C.

Original languageEnglish
Title of host publicationProceedings Ninth Biennial University/Government/Industry Microelectronics Symposium
Editors Anon
PublisherPubl by IEEE
Pages210-215
Number of pages6
ISBN (Print)0780301092
StatePublished - 1991
EventProceedings of the 9th Biennial University/Government/Industry Microelectronics Symposium - Melbourne, FL, USA
Duration: 12 Jun 199114 Jun 1991

Publication series

NameProceedings Ninth Biennial University/Government/Industry Microelectronics Symposium

Conference

ConferenceProceedings of the 9th Biennial University/Government/Industry Microelectronics Symposium
CityMelbourne, FL, USA
Period12/06/9114/06/91

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