Abstract
We have measured the in-plane tunneling conductance of optimally doped YBa2Cu3O7-x films/In junctions as a function of magnetic field and film orientation. In zero applied field all samples exhibit a zero bias conductance peak (ZBCP) attributed to the d-wave symmetry of the order parameter. In junctions formed on (110) oriented films, the splitting δ↓(H) of the ZBCP in decreasing fields applied perpendicular to the CuO2 planes follows the law δ ↓(H) = A · H1/2 with A = 1.1 mV/T 1/2. This law is obeyed up to 16 T for film thickness varying from 600 Å (less than the London penetration depth λ) up to 3200 Å (about twice λ). Since Meissner currents are negligible in decreasing fields and at thickness smaller than λ, this splitting cannot be attributed to a Doppler shift of zero energy surface bound states. The data taken in decreasing fields is quantitatively consistent with a field induced idxy component of the order parameter. The effect of the Doppler shift is prominent in data taken in increasing fields and in the field hysteresis of the splitting.
Original language | English |
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Article number | 144506 |
Pages (from-to) | 144506-1-144506-4 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 69 |
Issue number | 14 |
DOIs | |
State | Published - Apr 2004 |