Optically pumped Hg1-xZnxTe lasers grown by liquid phase epitaxy

A. Ravid; Z. Zussman; A. Sher; Yoram Shapira

doi:10.1063/1.104679

Optically pumped Hg_1-xZn_xTe lasers grown by liquid phase epitaxy

A. Ravid^*
, Z. Zussman
, A. Sher
, Yoram Shapira

^*Corresponding author for this work

Department of Electrical Engineering - Physical Eng.

Soreq Nuclear Research Center

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Optically pumped stimulated emission is reported for the first time from Hg_1-xZn_xTe (x≊0.23) epilayers grown by liquid phase epitaxy. Pulsed lasing was observed up to 70 K. Maximum single mirror peak power output of 23 and 2 mW was measured at 12 and 70 K, respectively. The laser emission spectra consisted of a strong line around 5.4 μm, and a weaker one, 6-7 meV below it, which were attributed to band-to-band and to band-to-acceptor transitions. Far-field patterns with angular width of θ_⊥= 4°and θ_∥≊2.5°have been observed perpendicular and parallel to the layer plane, respectively.

Original language	English
Pages (from-to)	337-339
Number of pages	3
Journal	Applied Physics Letters
Volume	58
Issue number	4
DOIs	https://doi.org/10.1063/1.104679
State	Published - 1991

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title = "Optically pumped Hg1-xZnxTe lasers grown by liquid phase epitaxy",

abstract = "Optically pumped stimulated emission is reported for the first time from Hg1-xZnxTe (x≊0.23) epilayers grown by liquid phase epitaxy. Pulsed lasing was observed up to 70 K. Maximum single mirror peak power output of 23 and 2 mW was measured at 12 and 70 K, respectively. The laser emission spectra consisted of a strong line around 5.4 μm, and a weaker one, 6-7 meV below it, which were attributed to band-to-band and to band-to-acceptor transitions. Far-field patterns with angular width of θ⊥= 4°and θ∥≊2.5°have been observed perpendicular and parallel to the layer plane, respectively.",

author = "A. Ravid and Z. Zussman and A. Sher and Yoram Shapira",

year = "1991",

doi = "10.1063/1.104679",

language = "אנגלית",

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T1 - Optically pumped Hg1-xZnxTe lasers grown by liquid phase epitaxy

AU - Ravid, A.

AU - Zussman, Z.

AU - Sher, A.

AU - Shapira, Yoram

PY - 1991

Y1 - 1991

N2 - Optically pumped stimulated emission is reported for the first time from Hg1-xZnxTe (x≊0.23) epilayers grown by liquid phase epitaxy. Pulsed lasing was observed up to 70 K. Maximum single mirror peak power output of 23 and 2 mW was measured at 12 and 70 K, respectively. The laser emission spectra consisted of a strong line around 5.4 μm, and a weaker one, 6-7 meV below it, which were attributed to band-to-band and to band-to-acceptor transitions. Far-field patterns with angular width of θ⊥= 4°and θ∥≊2.5°have been observed perpendicular and parallel to the layer plane, respectively.

AB - Optically pumped stimulated emission is reported for the first time from Hg1-xZnxTe (x≊0.23) epilayers grown by liquid phase epitaxy. Pulsed lasing was observed up to 70 K. Maximum single mirror peak power output of 23 and 2 mW was measured at 12 and 70 K, respectively. The laser emission spectra consisted of a strong line around 5.4 μm, and a weaker one, 6-7 meV below it, which were attributed to band-to-band and to band-to-acceptor transitions. Far-field patterns with angular width of θ⊥= 4°and θ∥≊2.5°have been observed perpendicular and parallel to the layer plane, respectively.

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JF - Applied Physics Letters

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ER -

Optically pumped Hg_1-xZn_xTe lasers grown by liquid phase epitaxy

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