TY - JOUR
T1 - Optical characterization of filtered vacuum arc deposited zinc oxide thin films
AU - Çetinörgü, E.
AU - Goldsmith, S.
AU - Zhitomirsky, V. N.
AU - Boxman, R. L.
AU - Bungay, C. L.
PY - 2006/9/1
Y1 - 2006/9/1
N2 - ZnO thin films, 100-250 nm thick, were deposited on microscope glass slides and UV fused silica (UVFS) substrates using a filtered vacuum arc deposition (FVAD) system, operating at room temperature (RT) and 200 A for 60 s. The cathode was prepared from 99.9% pure Zn metal and the oxygen background pressure during deposition was in the range 0.67-0.93 Pa. The films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), optical transmission and spectroscopic ellipsometry. As-deposited ZnO films were found to be polycrystalline with c-axis orientation. The atomic concentration ratio of Zn to O in the film as determined by XPS analysis was stoichiometric. Film transmission in the visible was 70-90%. The maximum and minimum values of the refractive index n and the extinction coefficient k in the visible, for all samples, were 2.23 to 1.90 and 0.6 to approximately 0, respectively. The type of inter-band electron transition was found to be direct transition with optical band gap in the range of 3.25-3.42 eV.
AB - ZnO thin films, 100-250 nm thick, were deposited on microscope glass slides and UV fused silica (UVFS) substrates using a filtered vacuum arc deposition (FVAD) system, operating at room temperature (RT) and 200 A for 60 s. The cathode was prepared from 99.9% pure Zn metal and the oxygen background pressure during deposition was in the range 0.67-0.93 Pa. The films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), optical transmission and spectroscopic ellipsometry. As-deposited ZnO films were found to be polycrystalline with c-axis orientation. The atomic concentration ratio of Zn to O in the film as determined by XPS analysis was stoichiometric. Film transmission in the visible was 70-90%. The maximum and minimum values of the refractive index n and the extinction coefficient k in the visible, for all samples, were 2.23 to 1.90 and 0.6 to approximately 0, respectively. The type of inter-band electron transition was found to be direct transition with optical band gap in the range of 3.25-3.42 eV.
UR - http://www.scopus.com/inward/record.url?scp=33747268652&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/21/9/015
DO - 10.1088/0268-1242/21/9/015
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AN - SCOPUS:33747268652
SN - 0268-1242
VL - 21
SP - 1303
EP - 1310
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 9
M1 - 015
ER -