Abstract
We grow a tiled structure of insulating two-dimensional LaAlO3/SrTiO3 interfaces composed of alternating one and three LaAlO3 unit cells. The boundary between two tiles is conducting. At low temperatures this conductance exhibits quantized steps as a function of gate voltage indicative of a one-dimensional channel. The step size of half the quantum of conductance is evidence for the absence of spin degeneracy.
Original language | English |
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Article number | 136801 |
Journal | Physical Review Letters |
Volume | 112 |
Issue number | 13 |
DOIs | |
State | Published - 1 Dec 2013 |