TY - JOUR
T1 - On thermal activation of interface-generated currents in high-resistivity silicon devices
AU - Ruzin, Arie
N1 - Funding Information:
The research was conducted with a financial support of the Israeli Ministry of Industry and Commerce and Jordan Valley Applied Radiation, Inc. We also express our gratitude to Micron Semiconductors, ITE and SINTEF detector manufacturers for their cooperation.
PY - 2003/10/11
Y1 - 2003/10/11
N2 - In this study Si/SiO2 interface properties of high-resistivity, detector-grade silicon are characterized, analyzed and compared. Wafers cut from the same ingots were processed by various technologies with the same mask set to emphasize the comparative nature of the study. Samples with resistivity in the range of 2-15 kΩ cm and orientations 〈1 1 1〉 and 〈1 0 0〉 were used. It is shown that the thermal activation energies of the surface-generated currents are similar in all the process technologies and wafer orientations. The concentration of the generation centers is shown to be process and orientation dependent. Current-voltage curves are shown to be somewhat different compared to the "textbook" case and computer simulation results are used to explain the difference.
AB - In this study Si/SiO2 interface properties of high-resistivity, detector-grade silicon are characterized, analyzed and compared. Wafers cut from the same ingots were processed by various technologies with the same mask set to emphasize the comparative nature of the study. Samples with resistivity in the range of 2-15 kΩ cm and orientations 〈1 1 1〉 and 〈1 0 0〉 were used. It is shown that the thermal activation energies of the surface-generated currents are similar in all the process technologies and wafer orientations. The concentration of the generation centers is shown to be process and orientation dependent. Current-voltage curves are shown to be somewhat different compared to the "textbook" case and computer simulation results are used to explain the difference.
KW - Activation energy
KW - Gated bodies
KW - Interface ganeration
KW - Si/So interface
UR - http://www.scopus.com/inward/record.url?scp=0142063494&partnerID=8YFLogxK
U2 - 10.1016/S0168-9002(03)01872-2
DO - 10.1016/S0168-9002(03)01872-2
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AN - SCOPUS:0142063494
SN - 0168-9002
VL - 512
SP - 8
EP - 20
JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
IS - 1-2
T2 - Proceedings of the 9th European Symposium on Semiconductor
Y2 - 23 July 2002 through 27 July 2002
ER -