On thermal activation of interface-generated currents in high-resistivity silicon devices

Arie Ruzin*

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


In this study Si/SiO2 interface properties of high-resistivity, detector-grade silicon are characterized, analyzed and compared. Wafers cut from the same ingots were processed by various technologies with the same mask set to emphasize the comparative nature of the study. Samples with resistivity in the range of 2-15 kΩ cm and orientations 〈1 1 1〉 and 〈1 0 0〉 were used. It is shown that the thermal activation energies of the surface-generated currents are similar in all the process technologies and wafer orientations. The concentration of the generation centers is shown to be process and orientation dependent. Current-voltage curves are shown to be somewhat different compared to the "textbook" case and computer simulation results are used to explain the difference.

Original languageEnglish
Pages (from-to)8-20
Number of pages13
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Issue number1-2
StatePublished - 11 Oct 2003
EventProceedings of the 9th European Symposium on Semiconductor - Elmau, Germany
Duration: 23 Jul 200227 Jul 2002


FundersFunder number
Israeli Ministry of Industry and Commerce and Jordan Valley


    • Activation energy
    • Gated bodies
    • Interface ganeration
    • Si/So interface


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