On the pressure dependence and k-space localization of the deep level states in zinc blend semiconductors doped by the transition metals

K. A. Kikoin*, V. N. Fleurov

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

An explanation is proposed for the unusual behaviour of the pressure dependent deep level position in Cr-doped InP. It is shown that this level is attached to the subsidiary L-minimum of the conduction band due to the large contribution of the L1c-point vicinity in the electron density of states, and the symmetry properties of d-impurity states suppressing the hybridization with the band states in the central {top right corner}1c valley of the conduction band.

Original languageEnglish
Pages (from-to)1281-1284
Number of pages4
JournalSolid State Communications
Volume39
Issue number12
DOIs
StatePublished - Sep 1981
Externally publishedYes

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