On the interaction of silver metallization with silicon dioxide

A. Inberg; E. Ginsburg; Y. Shacham-Diamand; N. Croitoru; A. Seidman

On the interaction of silver metallization with silicon dioxide

A. Inberg^*, E. Ginsburg, Y. Shacham-Diamand, N. Croitoru, A. Seidman

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this paper the thermal stability of Ag-W film was determined from Ag diffusion onto SiO₂ and was compared to that of pure Ag and Cu. Including W in the Ag films changes the film morphology and, as a result, the metal film stability. The metal films were deposited on SiO₂/Si substrate by electroless (El) and Ion-Beam Sputtering (IBS) methods and MOS capacitors were prepared. The Ag diffusion onto SiO₂ was studied at temperatures in the range of 450°C - 475°C using SIMS and AES depth profiling tools. The silver diffusivity in the oxide for Ag-W was in the range of 2 × 10^-15 cm²/sec at 475°C. This is one order of magnitude less than that of pure Ag and Cu measured on similar devices. The experimental Ag diffusion measurements results indicate that silver transport through oxide is slower than that of Cu. The Ag diffusion profiles for Ion-Beam Sputtered Ag-W had lower Ag concentration and shallower depth in the oxide when compared to the samples made by electroless deposition.

Original language	English
Pages (from-to)	233-237
Number of pages	5
Journal	Advanced Metallization Conference (AMC)
State	Published - 2001
Event	Advanced Metallization Conference 2001 (AMC 2001) - Montreal, Que., Canada Duration: 8 Oct 2001 → 11 Oct 2001

Keywords

Electroless
Ion-Beam Sputtering (IBS)
Silver
Tungsten

Cite this

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title = "On the interaction of silver metallization with silicon dioxide",

abstract = "In this paper the thermal stability of Ag-W film was determined from Ag diffusion onto SiO2 and was compared to that of pure Ag and Cu. Including W in the Ag films changes the film morphology and, as a result, the metal film stability. The metal films were deposited on SiO2/Si substrate by electroless (El) and Ion-Beam Sputtering (IBS) methods and MOS capacitors were prepared. The Ag diffusion onto SiO2 was studied at temperatures in the range of 450°C - 475°C using SIMS and AES depth profiling tools. The silver diffusivity in the oxide for Ag-W was in the range of 2 × 10-15 cm2/sec at 475°C. This is one order of magnitude less than that of pure Ag and Cu measured on similar devices. The experimental Ag diffusion measurements results indicate that silver transport through oxide is slower than that of Cu. The Ag diffusion profiles for Ion-Beam Sputtered Ag-W had lower Ag concentration and shallower depth in the oxide when compared to the samples made by electroless deposition.",

keywords = "Electroless, Ion-Beam Sputtering (IBS), Silver, Tungsten",

author = "A. Inberg and E. Ginsburg and Y. Shacham-Diamand and N. Croitoru and A. Seidman",

year = "2001",

language = "אנגלית",

pages = "233--237",

journal = "Advanced Metallization Conference (AMC)",

issn = "1540-1766",

note = "null ; Conference date: 08-10-2001 Through 11-10-2001",

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TY - JOUR

T1 - On the interaction of silver metallization with silicon dioxide

AU - Inberg, A.

AU - Ginsburg, E.

AU - Shacham-Diamand, Y.

AU - Croitoru, N.

AU - Seidman, A.

PY - 2001

Y1 - 2001

N2 - In this paper the thermal stability of Ag-W film was determined from Ag diffusion onto SiO2 and was compared to that of pure Ag and Cu. Including W in the Ag films changes the film morphology and, as a result, the metal film stability. The metal films were deposited on SiO2/Si substrate by electroless (El) and Ion-Beam Sputtering (IBS) methods and MOS capacitors were prepared. The Ag diffusion onto SiO2 was studied at temperatures in the range of 450°C - 475°C using SIMS and AES depth profiling tools. The silver diffusivity in the oxide for Ag-W was in the range of 2 × 10-15 cm2/sec at 475°C. This is one order of magnitude less than that of pure Ag and Cu measured on similar devices. The experimental Ag diffusion measurements results indicate that silver transport through oxide is slower than that of Cu. The Ag diffusion profiles for Ion-Beam Sputtered Ag-W had lower Ag concentration and shallower depth in the oxide when compared to the samples made by electroless deposition.

AB - In this paper the thermal stability of Ag-W film was determined from Ag diffusion onto SiO2 and was compared to that of pure Ag and Cu. Including W in the Ag films changes the film morphology and, as a result, the metal film stability. The metal films were deposited on SiO2/Si substrate by electroless (El) and Ion-Beam Sputtering (IBS) methods and MOS capacitors were prepared. The Ag diffusion onto SiO2 was studied at temperatures in the range of 450°C - 475°C using SIMS and AES depth profiling tools. The silver diffusivity in the oxide for Ag-W was in the range of 2 × 10-15 cm2/sec at 475°C. This is one order of magnitude less than that of pure Ag and Cu measured on similar devices. The experimental Ag diffusion measurements results indicate that silver transport through oxide is slower than that of Cu. The Ag diffusion profiles for Ion-Beam Sputtered Ag-W had lower Ag concentration and shallower depth in the oxide when compared to the samples made by electroless deposition.

KW - Electroless

KW - Ion-Beam Sputtering (IBS)

KW - Silver

KW - Tungsten

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AN - SCOPUS:0035555052

SN - 1540-1766

SP - 233

EP - 237

JO - Advanced Metallization Conference (AMC)

JF - Advanced Metallization Conference (AMC)

Y2 - 8 October 2001 through 11 October 2001

ER -

On the interaction of silver metallization with silicon dioxide

Abstract

Keywords

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