On the ferromagnetic exchange in Mn-doped III-V semiconductors

V. A. Ivanov; P. M. Krstajić; F. M. Peeters; V. Fleurov; K. Kikoin

doi:10.1016/S0921-4526(02)02240-8

On the ferromagnetic exchange in Mn-doped III-V semiconductors

V. A. Ivanov^*, P. M. Krstajić, F. M. Peeters, V. Fleurov, K. Kikoin

^*Corresponding author for this work

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We propose a microscopic model for double exchange in GaAs:Mn, GaP:Mn which is based on the interaction between the transition metal impurities and the heavy holes of host semiconductor. The kinematic exchange is derived and the Curie temperature is calculated which agrees with recent experiments.

Original language	English
Pages (from-to)	1282-1283
Number of pages	2
Journal	Physica B: Condensed Matter
Volume	329-333
Issue number	II
DOIs	https://doi.org/10.1016/S0921-4526(02)02240-8
State	Published - May 2003

Keywords

Anderson-Hubbard repulsion
Dilute magnetic semiconductors
Zener exchange

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10.1016/S0921-4526(02)02240-8

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title = "On the ferromagnetic exchange in Mn-doped III-V semiconductors",

abstract = "We propose a microscopic model for double exchange in GaAs:Mn, GaP:Mn which is based on the interaction between the transition metal impurities and the heavy holes of host semiconductor. The kinematic exchange is derived and the Curie temperature is calculated which agrees with recent experiments.",

keywords = "Anderson-Hubbard repulsion, Dilute magnetic semiconductors, Zener exchange",

author = "Ivanov, {V. A.} and Krstaji{\'c}, {P. M.} and Peeters, {F. M.} and V. Fleurov and K. Kikoin",

note = "Funding Information: This work was supported by the Flemish Science Foundation (FWO-VI), the Belgian Inter-University Attraction Poles (IUAP-IV), the “Onderzoeksraad van de Universiteit Antwerpen” (GOA) and the Israel Physical Society. ",

year = "2003",

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doi = "10.1016/S0921-4526(02)02240-8",

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journal = "Physica B: Condensed Matter",

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T1 - On the ferromagnetic exchange in Mn-doped III-V semiconductors

AU - Ivanov, V. A.

AU - Krstajić, P. M.

AU - Peeters, F. M.

AU - Fleurov, V.

AU - Kikoin, K.

N1 - Funding Information: This work was supported by the Flemish Science Foundation (FWO-VI), the Belgian Inter-University Attraction Poles (IUAP-IV), the “Onderzoeksraad van de Universiteit Antwerpen” (GOA) and the Israel Physical Society.

PY - 2003/5

Y1 - 2003/5

N2 - We propose a microscopic model for double exchange in GaAs:Mn, GaP:Mn which is based on the interaction between the transition metal impurities and the heavy holes of host semiconductor. The kinematic exchange is derived and the Curie temperature is calculated which agrees with recent experiments.

AB - We propose a microscopic model for double exchange in GaAs:Mn, GaP:Mn which is based on the interaction between the transition metal impurities and the heavy holes of host semiconductor. The kinematic exchange is derived and the Curie temperature is calculated which agrees with recent experiments.

KW - Anderson-Hubbard repulsion

KW - Dilute magnetic semiconductors

KW - Zener exchange

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VL - 329-333

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EP - 1283

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - II

ER -

On the ferromagnetic exchange in Mn-doped III-V semiconductors

Abstract

Keywords

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