On Polarization of Compensated Detectors

Arie Ruzin*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


This paper presents analyses of polarization effects in ohmic and junction sensors by detailed three-dimensional modeling. It is shown for the example of compensated Cd1 - xZnxTe detectors that the compensating deep-levels can be also responsible for both bias-induced and ionization-induced polarization phenomena. The capture cross sections of the deep levels are shown to play a dominant role in the formation of the polarizing space charge. Calculations show that bias-induced polarization is not expected to occur in ohmic MSM structures as long as the mobility remains constant. Ionization-induced polarization is expected to occur equally in ohmic and Schottky devices, but the sign and the distribution of the polarizing space charge depend on deep level cross sections.

Original languageEnglish
Article number7454844
Pages (from-to)1188-1193
Number of pages6
JournalIEEE Transactions on Nuclear Science
Issue number2
StatePublished - Apr 2016


FundersFunder number
Israel Science Foundation322/14


    • CdZnTe
    • compensated semiconductors
    • detectors
    • polarization
    • radiation-induced defects


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