On-chip transmitter with an EIRP of +2.8 dBm at 217 GHz in 90 nm CMOS

Bassam Khamaisi; Samuel Jameson; Eran Socher

doi:10.1109/COMCAS.2013.6685261

On-chip transmitter with an EIRP of +2.8 dBm at 217 GHz in 90 nm CMOS

Bassam Khamaisi, Samuel Jameson, Eran Socher

School of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, we present a transmitter operating in the 210-227 GHz in 90-nm CMOS, based on a Colpitts VCO. The third harmonic of the generated VCO fundamental signal is coupled to an on-chip dipole antenna. The silicon substrate of the CMOS chip is thinned from 280 μm to 80 μm in order to improve the performance of the transmitter in terms of effective isotropic radiated power (EIRP) and directivity. The transmitter achieves an EIRP of +2.8 dBm at 217 GHz and a directivity of about +13.1 dBi with a total power radiated of -10.3 dBm. The circuit consumes 134 mW of DC power and an area of 0.53 mm².

Original language	English
Title of host publication	2013 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2013
DOIs	https://doi.org/10.1109/COMCAS.2013.6685261
State	Published - 2013
Event	2013 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2013 - Tel Aviv, Israel Duration: 21 Oct 2013 → 23 Oct 2013

Publication series

Name	2013 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2013

Conference

Conference	2013 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2013
Country/Territory	Israel
City	Tel Aviv
Period	21/10/13 → 23/10/13

Keywords

CMOS
Dipole Antenna
Millimeter wave circuits
On-Chip Antenna
THz imaging
Transmitter
Voltage Controlled Oscillator

Access to Document

10.1109/COMCAS.2013.6685261

Cite this

Khamaisi, B., Jameson, S., & Socher, E. (2013). On-chip transmitter with an EIRP of +2.8 dBm at 217 GHz in 90 nm CMOS. In 2013 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2013 [6685261] (2013 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2013). https://doi.org/10.1109/COMCAS.2013.6685261

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abstract = "In this paper, we present a transmitter operating in the 210-227 GHz in 90-nm CMOS, based on a Colpitts VCO. The third harmonic of the generated VCO fundamental signal is coupled to an on-chip dipole antenna. The silicon substrate of the CMOS chip is thinned from 280 μm to 80 μm in order to improve the performance of the transmitter in terms of effective isotropic radiated power (EIRP) and directivity. The transmitter achieves an EIRP of +2.8 dBm at 217 GHz and a directivity of about +13.1 dBi with a total power radiated of -10.3 dBm. The circuit consumes 134 mW of DC power and an area of 0.53 mm2.",

keywords = "CMOS, Dipole Antenna, Millimeter wave circuits, On-Chip Antenna, THz imaging, Transmitter, Voltage Controlled Oscillator",

author = "Bassam Khamaisi and Samuel Jameson and Eran Socher",

year = "2013",

doi = "10.1109/COMCAS.2013.6685261",

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Khamaisi, B, Jameson, S & Socher, E 2013, On-chip transmitter with an EIRP of +2.8 dBm at 217 GHz in 90 nm CMOS. in 2013 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2013., 6685261, 2013 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2013, 2013 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2013, Tel Aviv, Israel, 21/10/13. https://doi.org/10.1109/COMCAS.2013.6685261

On-chip transmitter with an EIRP of +2.8 dBm at 217 GHz in 90 nm CMOS. / Khamaisi, Bassam; Jameson, Samuel; Socher, Eran.

2013 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2013. 2013. 6685261 (2013 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Jameson, Samuel

AU - Socher, Eran

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N2 - In this paper, we present a transmitter operating in the 210-227 GHz in 90-nm CMOS, based on a Colpitts VCO. The third harmonic of the generated VCO fundamental signal is coupled to an on-chip dipole antenna. The silicon substrate of the CMOS chip is thinned from 280 μm to 80 μm in order to improve the performance of the transmitter in terms of effective isotropic radiated power (EIRP) and directivity. The transmitter achieves an EIRP of +2.8 dBm at 217 GHz and a directivity of about +13.1 dBi with a total power radiated of -10.3 dBm. The circuit consumes 134 mW of DC power and an area of 0.53 mm2.

AB - In this paper, we present a transmitter operating in the 210-227 GHz in 90-nm CMOS, based on a Colpitts VCO. The third harmonic of the generated VCO fundamental signal is coupled to an on-chip dipole antenna. The silicon substrate of the CMOS chip is thinned from 280 μm to 80 μm in order to improve the performance of the transmitter in terms of effective isotropic radiated power (EIRP) and directivity. The transmitter achieves an EIRP of +2.8 dBm at 217 GHz and a directivity of about +13.1 dBi with a total power radiated of -10.3 dBm. The circuit consumes 134 mW of DC power and an area of 0.53 mm2.

KW - CMOS

KW - Dipole Antenna

KW - Millimeter wave circuits

KW - On-Chip Antenna

KW - THz imaging

KW - Transmitter

KW - Voltage Controlled Oscillator

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Khamaisi B, Jameson S, Socher E. On-chip transmitter with an EIRP of +2.8 dBm at 217 GHz in 90 nm CMOS. In 2013 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2013. 2013. 6685261. (2013 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2013). https://doi.org/10.1109/COMCAS.2013.6685261

On-chip transmitter with an EIRP of +2.8 dBm at 217 GHz in 90 nm CMOS

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