Nucleation effects of tungsten chemical vapor deposition on B 2H6 pre-treated titanium nitride for sub-45 nm contacts

Avraham Rozenblat, Rotem Drori, Maor Rotlain, Yosi Shacham-Diamand, Dror Horvitz

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Characteristics of tungsten nucleation layer are strongly governed by surface pretreatment and by the early stages of deposition known to affect the electrical properties of the film. In this work we investigated the effect of B2H6 treatment on the initial stages of tungsten chemical vapor deposition (CVD). Chemically sensitive x-ray photoelectron spectroscopy (XPS) was employed to investigate the surface reactions between B 2H6 and air exposed (technical) TiN and the reaction between W/F6 molecules and B2H6 treated TiN. We show that the reaction of B2H6 results in reduction of TiO2 and formation of TiB2 and BN species. It is also shown that the BN act as a template site for WF6 reaction. The surface coverage of W-CVD process on B2H6 treated TiN was quantitatively measured by XPS for various CVD pulse durations and characterized by AFM and HRTEM. Results suggest that W CVD on B2H6 treated TiN, follows the Stranski-Krastanov (S-K) growth mode, similar to SiH4 treatment but with significantly shorter incubation time.

Original languageEnglish
Title of host publicationAdvanced Metallization Conference 2009, AMC 2009
Pages27-34
Number of pages8
StatePublished - 2010
Event26th Advanced Metallization Conference, AMC 2009 - Baltimore, MD, United States
Duration: 13 Oct 200915 Oct 2009

Publication series

NameAdvanced Metallization Conference (AMC)
ISSN (Print)1540-1766

Conference

Conference26th Advanced Metallization Conference, AMC 2009
Country/TerritoryUnited States
CityBaltimore, MD
Period13/10/0915/10/09

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