Nucleation and growth of CoSi2 dots on Si(001)

I. Goldfarb, G. A. D. Briggs

Research output: Contribution to journalArticlepeer-review


Nucleation and growth of reactively-deposited CoSi2 were analyzed in-situ by scanning tunneling microscopy and surface electron diffraction. Nucleation on flat Si(001) terraces leads to a Volmer-Weber growth, resulting in a mixture of faceted (221)- and flat-topped (001)-oriented three-dimensional nanocrystals. It is imperative to understand the growth modes of this technol.-important silicide, as, when grown with a smooth morphol., it is a primary candidate for epitaxial metalization in ULSI. However the apparent crystalline perfection of the nanocrystals implies another possibility, i.e. of application in quantum-dot devices. Therefore the growth kinetics of CoSi2/Si(001) nanocrystals (dots) was analyzed from the evolution of dot size distribution with annealing time. The dot growth obeys a power law with 1/5 exponent, and is dominated by coalescence. Some parallels with Ge/Si(001) dots can be drawn.
Original languageAmerican English
Pages (from-to)553-556
Number of pages4
JournalInstitute of Physics Conference Series
StatePublished - 1999
Externally publishedYes


  • nucleation growth cobalt silicide dot silicon


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