Abstract
Nucleation and growth of reactively-deposited CoSi2 were analyzed in-situ by scanning tunneling microscopy and surface electron diffraction. Nucleation on flat Si(001) terraces leads to a Volmer-Weber growth, resulting in a mixture of faceted (221)- and flat-topped (001)-oriented three-dimensional nanocrystals. It is imperative to understand the growth modes of this technol.-important silicide, as, when grown with a smooth morphol., it is a primary candidate for epitaxial metalization in ULSI. However the apparent crystalline perfection of the nanocrystals implies another possibility, i.e. of application in quantum-dot devices. Therefore the growth kinetics of CoSi2/Si(001) nanocrystals (dots) was analyzed from the evolution of dot size distribution with annealing time. The dot growth obeys a power law with 1/5 exponent, and is dominated by coalescence. Some parallels with Ge/Si(001) dots can be drawn.
| Original language | American English |
|---|---|
| Pages (from-to) | 553-556 |
| Number of pages | 4 |
| Journal | Institute of Physics Conference Series |
| Volume | 164 |
| State | Published - 1999 |
| Externally published | Yes |
Keywords
- nucleation growth cobalt silicide dot silicon