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Novel X- and Gamma-Ray Sensors Based on Bulk-Grown Silicon-Germanium
A. Ruzin
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Corresponding author for this work
School of Electrical Engineering
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Keyphrases
Absorption Efficiency
50%
Band Broadening
50%
Cryogenic Temperature
50%
Detection Efficiency
50%
Device Operation
50%
Gamma Ray Sensor
100%
Germanium
50%
Germanium Detector
50%
Hole Mobility
50%
Multicrystalline Silicon
50%
Sensor-based
100%
Silicon Sensors
50%
Silicon-germanium
100%
X-ray Photon
50%
X-ray Sensor
100%
Physics
Cryogenic Temperature
50%
Energy Gaps (Solid State)
50%
Gamma Radiation
100%
Single Crystal
50%
Material Science
Germanium
100%
Hole Mobility
25%
Silicon
100%
Single Crystal
25%