Novel X- and Gamma-Ray Sensors Based on Bulk-Grown Silicon-Germanium

Research output: Contribution to journalArticlepeer-review

Abstract

In this brief, preliminary experimental results and the theoretical assessment of various compositions of bulk-grown, single-crystal silicon-germanium (SiGe) for application in X- and gamma-ray sensors, are presented. It is shown that the absorption efficiency of Si1-xGe x sensors is significantly superior to that of silicon sensors, even for relatively low germanium concentrations, while the bandgap narrowing should be sufficiently small not to restrict the device operation to cryogenic temperatures, as in the case of pure germanium detectors. The experimental results obtained with PIN-like devices manufactured on Si0.95 Ge 0.05 indicate suitable hole mobility, and superior detection efficiency for X-ray photons.

Original languageEnglish
Pages (from-to)2581-2583
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume50
Issue number12
DOIs
StatePublished - Dec 2003

Keywords

  • Bulk SiGe
  • Detectors
  • Semiconductor
  • X-ray

Fingerprint

Dive into the research topics of 'Novel X- and Gamma-Ray Sensors Based on Bulk-Grown Silicon-Germanium'. Together they form a unique fingerprint.

Cite this