TY - JOUR
T1 - Novel X- and Gamma-Ray Sensors Based on Bulk-Grown Silicon-Germanium
AU - Ruzin, A.
PY - 2003/12
Y1 - 2003/12
N2 - In this brief, preliminary experimental results and the theoretical assessment of various compositions of bulk-grown, single-crystal silicon-germanium (SiGe) for application in X- and gamma-ray sensors, are presented. It is shown that the absorption efficiency of Si1-xGe x sensors is significantly superior to that of silicon sensors, even for relatively low germanium concentrations, while the bandgap narrowing should be sufficiently small not to restrict the device operation to cryogenic temperatures, as in the case of pure germanium detectors. The experimental results obtained with PIN-like devices manufactured on Si0.95 Ge 0.05 indicate suitable hole mobility, and superior detection efficiency for X-ray photons.
AB - In this brief, preliminary experimental results and the theoretical assessment of various compositions of bulk-grown, single-crystal silicon-germanium (SiGe) for application in X- and gamma-ray sensors, are presented. It is shown that the absorption efficiency of Si1-xGe x sensors is significantly superior to that of silicon sensors, even for relatively low germanium concentrations, while the bandgap narrowing should be sufficiently small not to restrict the device operation to cryogenic temperatures, as in the case of pure germanium detectors. The experimental results obtained with PIN-like devices manufactured on Si0.95 Ge 0.05 indicate suitable hole mobility, and superior detection efficiency for X-ray photons.
KW - Bulk SiGe
KW - Detectors
KW - Semiconductor
KW - X-ray
UR - http://www.scopus.com/inward/record.url?scp=0347338034&partnerID=8YFLogxK
U2 - 10.1109/TED.2003.820300
DO - 10.1109/TED.2003.820300
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AN - SCOPUS:0347338034
SN - 0018-9383
VL - 50
SP - 2581
EP - 2583
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 12
ER -