Novel variable gallium arsenide capacitors

G. Ashkinazi*, B. Meyler, M. Nathan, L. Zolotarevski, O. Zolotarevski

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The development of a new type of variable semiconductor capacitor is reported. Its essence is a monolithic (or hybrid) GaAs structure consisting of a reverse biased, high voltage, low reverse current Schottky diode connected in series (back-to-back) to a forward biased PiN diode. The PiN diode has an i layer with a net doping concentration (Nd-Na)i of less than 5×1011 cm-3 and a width of between 3 and 70 μm. The principle of operation is based mainly on control of the PiN diode diffusion capacitance by the reverse Schottky diode current. This current can be changed by structural design or by light. Experimental parameters of a light controlled capacitor include Cmax/Cmin ratios of 20 at ∼1 V and 4-5 at 35 V and a ΔC/ΔV slope of ∼2000 pF/V.

Original languageEnglish
Pages (from-to)3214-3216
Number of pages3
JournalJournal of Applied Physics
Volume75
Issue number6
DOIs
StatePublished - 1994

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