Novel variable gallium arsenide capacitors

G. Ashkinazi; B. Meyler; M. Nathan; L. Zolotarevski; O. Zolotarevski

doi:10.1063/1.356126

Novel variable gallium arsenide capacitors

G. Ashkinazi^*, B. Meyler, M. Nathan, L. Zolotarevski, O. Zolotarevski

^*Corresponding author for this work

School of Electrical Engineering

Tel Aviv University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The development of a new type of variable semiconductor capacitor is reported. Its essence is a monolithic (or hybrid) GaAs structure consisting of a reverse biased, high voltage, low reverse current Schottky diode connected in series (back-to-back) to a forward biased PiN diode. The PiN diode has an i layer with a net doping concentration (N_d-N_a)_i of less than 5×10¹¹ cm^-3 and a width of between 3 and 70 μm. The principle of operation is based mainly on control of the PiN diode diffusion capacitance by the reverse Schottky diode current. This current can be changed by structural design or by light. Experimental parameters of a light controlled capacitor include C_max/C_min ratios of 20 at ∼1 V and 4-5 at 35 V and a ΔC/ΔV slope of ∼2000 pF/V.

Original language	English
Pages (from-to)	3214-3216
Number of pages	3
Journal	Journal of Applied Physics
Volume	75
Issue number	6
DOIs	https://doi.org/10.1063/1.356126
State	Published - 1994

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title = "Novel variable gallium arsenide capacitors",

abstract = "The development of a new type of variable semiconductor capacitor is reported. Its essence is a monolithic (or hybrid) GaAs structure consisting of a reverse biased, high voltage, low reverse current Schottky diode connected in series (back-to-back) to a forward biased PiN diode. The PiN diode has an i layer with a net doping concentration (Nd-Na)i of less than 5×1011 cm-3 and a width of between 3 and 70 μm. The principle of operation is based mainly on control of the PiN diode diffusion capacitance by the reverse Schottky diode current. This current can be changed by structural design or by light. Experimental parameters of a light controlled capacitor include Cmax/Cmin ratios of 20 at ∼1 V and 4-5 at 35 V and a ΔC/ΔV slope of ∼2000 pF/V.",

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T1 - Novel variable gallium arsenide capacitors

AU - Ashkinazi, G.

AU - Meyler, B.

AU - Nathan, M.

AU - Zolotarevski, L.

AU - Zolotarevski, O.

PY - 1994

Y1 - 1994

N2 - The development of a new type of variable semiconductor capacitor is reported. Its essence is a monolithic (or hybrid) GaAs structure consisting of a reverse biased, high voltage, low reverse current Schottky diode connected in series (back-to-back) to a forward biased PiN diode. The PiN diode has an i layer with a net doping concentration (Nd-Na)i of less than 5×1011 cm-3 and a width of between 3 and 70 μm. The principle of operation is based mainly on control of the PiN diode diffusion capacitance by the reverse Schottky diode current. This current can be changed by structural design or by light. Experimental parameters of a light controlled capacitor include Cmax/Cmin ratios of 20 at ∼1 V and 4-5 at 35 V and a ΔC/ΔV slope of ∼2000 pF/V.

AB - The development of a new type of variable semiconductor capacitor is reported. Its essence is a monolithic (or hybrid) GaAs structure consisting of a reverse biased, high voltage, low reverse current Schottky diode connected in series (back-to-back) to a forward biased PiN diode. The PiN diode has an i layer with a net doping concentration (Nd-Na)i of less than 5×1011 cm-3 and a width of between 3 and 70 μm. The principle of operation is based mainly on control of the PiN diode diffusion capacitance by the reverse Schottky diode current. This current can be changed by structural design or by light. Experimental parameters of a light controlled capacitor include Cmax/Cmin ratios of 20 at ∼1 V and 4-5 at 35 V and a ΔC/ΔV slope of ∼2000 pF/V.

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Novel variable gallium arsenide capacitors

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