NOVEL ION-IMPLANTED AMORPHOUS SILICON PROGRAMMABLE ELEMENT.

Yosi Shacham-Diamand, Alex Sinar, Eric Sirkin, Ilan Blech, Levy Gerzberg

Research output: Contribution to journalConference articlepeer-review

Abstract

An ion-implanted programmable element suitable for integration with VLSI technology has been developed. The device operation is based on the electrical properties of a metal/amorphous silicon/single crystal silicon structure made by heavy-dose ion implantation into a contact to single crystal silicon. The initial resistance of the amorphous silicon is very high and its dielectric strength is the 1-MV/cm range. Its resistance drops by more than six orders of magnitude after switching, and the device is transformed irreversibly into its conductive state.

Original languageEnglish
Pages (from-to)194-197
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 1987
Externally publishedYes

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