Novel CMOS compatible frontside micromachining of integrated thermoelectric sensors

E. Socher; O. Bochobza-Degani; Y. Nemirovsky

doi:10.1109/EEEI.2000.924455

Novel CMOS compatible frontside micromachining of integrated thermoelectric sensors

E. Socher^*
, O. Bochobza-Degani
, Y. Nemirovsky

^*Corresponding author for this work

Technion-Israel Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

CMOS compatible integrated thermoelectric sensors were designed and realized using a standard CMOS process and frontside NE micromachining. The suspended structures were designed to have a spiral structure that enhances the thermal resistance and isolation of the sensor. Using dry RIE frontside micromachining for the release of the sensors allows better yield in realization of sensitive and smaller sensor pixels. Measured results of sensors used for IR detection show NEP's down to 0.4 nW/ Hz and response times down to 3 msec in 70∗70 μ2 pixels.

Original language	English
Title of host publication	21st IEEE Convention of the Electrical and Electronic Engineers in Israel, Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	417-420
Number of pages	4
ISBN (Electronic)	0780358422, 9780780358423
DOIs	https://doi.org/10.1109/EEEI.2000.924455
State	Published - 2000
Externally published	Yes
Event	21st IEEE Convention of the Electrical and Electronic Engineers in Israel, IEEEI 2000 - Tel-Aviv, Israel Duration: 11 Apr 2000 → 12 Apr 2000

Publication series

Name	21st IEEE Convention of the Electrical and Electronic Engineers in Israel, Proceedings

Conference

Conference	21st IEEE Convention of the Electrical and Electronic Engineers in Israel, IEEEI 2000
Country/Territory	Israel
City	Tel-Aviv
Period	11/04/00 → 12/04/00

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 9 Industry, Innovation, and Infrastructure

Access to Document

10.1109/EEEI.2000.924455

Cite this

Socher, E., Bochobza-Degani, O., & Nemirovsky, Y. (2000). Novel CMOS compatible frontside micromachining of integrated thermoelectric sensors. In 21st IEEE Convention of the Electrical and Electronic Engineers in Israel, Proceedings (pp. 417-420). Article 924455 (21st IEEE Convention of the Electrical and Electronic Engineers in Israel, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EEEI.2000.924455

Socher, E. ; Bochobza-Degani, O. ; Nemirovsky, Y. / Novel CMOS compatible frontside micromachining of integrated thermoelectric sensors. 21st IEEE Convention of the Electrical and Electronic Engineers in Israel, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2000. pp. 417-420 (21st IEEE Convention of the Electrical and Electronic Engineers in Israel, Proceedings).

@inproceedings{afdd2865ff7d48a28fc75a0f63caf20d,

title = "Novel CMOS compatible frontside micromachining of integrated thermoelectric sensors",

abstract = "CMOS compatible integrated thermoelectric sensors were designed and realized using a standard CMOS process and frontside NE micromachining. The suspended structures were designed to have a spiral structure that enhances the thermal resistance and isolation of the sensor. Using dry RIE frontside micromachining for the release of the sensors allows better yield in realization of sensitive and smaller sensor pixels. Measured results of sensors used for IR detection show NEP's down to 0.4 nW/ Hz and response times down to 3 msec in 70∗70 μ2 pixels.",

author = "E. Socher and O. Bochobza-Degani and Y. Nemirovsky",

note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; 21st IEEE Convention of the Electrical and Electronic Engineers in Israel, IEEEI 2000 ; Conference date: 11-04-2000 Through 12-04-2000",

year = "2000",

doi = "10.1109/EEEI.2000.924455",

language = "אנגלית",

series = "21st IEEE Convention of the Electrical and Electronic Engineers in Israel, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "417--420",

booktitle = "21st IEEE Convention of the Electrical and Electronic Engineers in Israel, Proceedings",

address = "ארצות הברית",

}

Socher, E, Bochobza-Degani, O & Nemirovsky, Y 2000, Novel CMOS compatible frontside micromachining of integrated thermoelectric sensors. in 21st IEEE Convention of the Electrical and Electronic Engineers in Israel, Proceedings., 924455, 21st IEEE Convention of the Electrical and Electronic Engineers in Israel, Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 417-420, 21st IEEE Convention of the Electrical and Electronic Engineers in Israel, IEEEI 2000, Tel-Aviv, Israel, 11/04/00. https://doi.org/10.1109/EEEI.2000.924455

Novel CMOS compatible frontside micromachining of integrated thermoelectric sensors. / Socher, E.; Bochobza-Degani, O.; Nemirovsky, Y.
21st IEEE Convention of the Electrical and Electronic Engineers in Israel, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2000. p. 417-420 924455 (21st IEEE Convention of the Electrical and Electronic Engineers in Israel, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Novel CMOS compatible frontside micromachining of integrated thermoelectric sensors

AU - Socher, E.

AU - Bochobza-Degani, O.

AU - Nemirovsky, Y.

PY - 2000

Y1 - 2000

N2 - CMOS compatible integrated thermoelectric sensors were designed and realized using a standard CMOS process and frontside NE micromachining. The suspended structures were designed to have a spiral structure that enhances the thermal resistance and isolation of the sensor. Using dry RIE frontside micromachining for the release of the sensors allows better yield in realization of sensitive and smaller sensor pixels. Measured results of sensors used for IR detection show NEP's down to 0.4 nW/ Hz and response times down to 3 msec in 70∗70 μ2 pixels.

AB - CMOS compatible integrated thermoelectric sensors were designed and realized using a standard CMOS process and frontside NE micromachining. The suspended structures were designed to have a spiral structure that enhances the thermal resistance and isolation of the sensor. Using dry RIE frontside micromachining for the release of the sensors allows better yield in realization of sensitive and smaller sensor pixels. Measured results of sensors used for IR detection show NEP's down to 0.4 nW/ Hz and response times down to 3 msec in 70∗70 μ2 pixels.

UR - https://www.scopus.com/pages/publications/34250790995

U2 - 10.1109/EEEI.2000.924455

DO - 10.1109/EEEI.2000.924455

M3 - ???researchoutput.researchoutputtypes.contributiontobookanthology.conference???

AN - SCOPUS:34250790995

T3 - 21st IEEE Convention of the Electrical and Electronic Engineers in Israel, Proceedings

SP - 417

EP - 420

BT - 21st IEEE Convention of the Electrical and Electronic Engineers in Israel, Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 21st IEEE Convention of the Electrical and Electronic Engineers in Israel, IEEEI 2000

Y2 - 11 April 2000 through 12 April 2000

ER -

Socher E, Bochobza-Degani O, Nemirovsky Y. Novel CMOS compatible frontside micromachining of integrated thermoelectric sensors. In 21st IEEE Convention of the Electrical and Electronic Engineers in Israel, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2000. p. 417-420. 924455. (21st IEEE Convention of the Electrical and Electronic Engineers in Israel, Proceedings). doi: 10.1109/EEEI.2000.924455

Novel CMOS compatible frontside micromachining of integrated thermoelectric sensors

Abstract

Publication series

Conference

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this