TY - GEN
T1 - Novel CMOS compatible frontside micromachining of integrated thermoelectric sensors
AU - Socher, E.
AU - Bochobza-Degani, O.
AU - Nemirovsky, Y.
N1 - Publisher Copyright:
© 2002 IEEE.
PY - 2000
Y1 - 2000
N2 - CMOS compatible integrated thermoelectric sensors were designed and realized using a standard CMOS process and frontside NE micromachining. The suspended structures were designed to have a spiral structure that enhances the thermal resistance and isolation of the sensor. Using dry RIE frontside micromachining for the release of the sensors allows better yield in realization of sensitive and smaller sensor pixels. Measured results of sensors used for IR detection show NEP's down to 0.4 nW/ Hz and response times down to 3 msec in 70∗70 μ2 pixels.
AB - CMOS compatible integrated thermoelectric sensors were designed and realized using a standard CMOS process and frontside NE micromachining. The suspended structures were designed to have a spiral structure that enhances the thermal resistance and isolation of the sensor. Using dry RIE frontside micromachining for the release of the sensors allows better yield in realization of sensitive and smaller sensor pixels. Measured results of sensors used for IR detection show NEP's down to 0.4 nW/ Hz and response times down to 3 msec in 70∗70 μ2 pixels.
UR - http://www.scopus.com/inward/record.url?scp=34250790995&partnerID=8YFLogxK
U2 - 10.1109/EEEI.2000.924455
DO - 10.1109/EEEI.2000.924455
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AN - SCOPUS:34250790995
T3 - 21st IEEE Convention of the Electrical and Electronic Engineers in Israel, Proceedings
SP - 417
EP - 420
BT - 21st IEEE Convention of the Electrical and Electronic Engineers in Israel, Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 21st IEEE Convention of the Electrical and Electronic Engineers in Israel, IEEEI 2000
Y2 - 11 April 2000 through 12 April 2000
ER -
