Novel CMOS compatible frontside micromachining of integrated thermoelectric sensors

E. Socher*, O. Bochobza-Degani, Y. Nemirovsky

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

CMOS compatible integrated thermoelectric sensors were designed and realized using a standard CMOS process and frontside NE micromachining. The suspended structures were designed to have a spiral structure that enhances the thermal resistance and isolation of the sensor. Using dry RIE frontside micromachining for the release of the sensors allows better yield in realization of sensitive and smaller sensor pixels. Measured results of sensors used for IR detection show NEP's down to 0.4 nW/ Hz and response times down to 3 msec in 70∗70 μ2 pixels.

Original languageEnglish
Title of host publication21st IEEE Convention of the Electrical and Electronic Engineers in Israel, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages417-420
Number of pages4
ISBN (Electronic)0780358422, 9780780358423
DOIs
StatePublished - 2000
Externally publishedYes
Event21st IEEE Convention of the Electrical and Electronic Engineers in Israel, IEEEI 2000 - Tel-Aviv, Israel
Duration: 11 Apr 200012 Apr 2000

Publication series

Name21st IEEE Convention of the Electrical and Electronic Engineers in Israel, Proceedings

Conference

Conference21st IEEE Convention of the Electrical and Electronic Engineers in Israel, IEEEI 2000
Country/TerritoryIsrael
CityTel-Aviv
Period11/04/0012/04/00

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