Nonvolatile low-voltage memory transistor based on SiO2 tunneling and HfO2 blocking layers with charge storage in Au nanocrystals

V. Mikhelashvili, B. Meyler, S. Yofis, Y. Shneider, A. Zeidler, M. Garbrecht, T. Cohen-Hyams, W. D. Kaplan, M. Lisiansky, Y. Roizin, J. Salzman, G. Eisenstein

Research output: Contribution to journalArticlepeer-review

Abstract

We demonstrate a low voltage nonvolatile memory field effect transistor comprising thermal SiO2 tunneling and HfO2 blocking layers as the gate dielectric stack and Au nanocrystals as charge storage nodes. The structure exhibits a memory window of ∼2 V at an applied sweeping voltage of ±3 V which increases to 12.6 at ±12 V. Retention tests show an extrapolated loss of 16% after ten years in the hysteresis width of the threshold voltage. Dynamic program/erase operation reveal an approximately pulse width independent memory for pulse durations of 1 μs to 10 ms; longer pulses increase the memory window while for pulses shorter than 1 μs, the memory windows vanishes. The effective oxide thickness is below 10 nm with very low gate and drain leakage currents.

Original languageEnglish
Article number212902
JournalApplied Physics Letters
Volume98
Issue number21
DOIs
StatePublished - 23 May 2011
Externally publishedYes

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