Native defects association enabled room-temperature p-type conductivity in β-Ga2O3

Zeyu Chi; Corinne Sartel; Yunlin Zheng; Sushrut Modak; Leonid Chernyak; Christian M. Schaefer; Jessica Padilla; Jose Santiso; Arie Ruzin; Anne Marie Gonçalves; Jurgen von Bardeleben; Gérard Guillot; Yves Dumont; Amador Pérez-Tomás; Ekaterine Chikoidze

doi:10.1016/j.jallcom.2023.172454

Native defects association enabled room-temperature p-type conductivity in β-Ga₂O₃

Zeyu Chi, Corinne Sartel, Yunlin Zheng, Sushrut Modak, Leonid Chernyak, Christian M. Schaefer, Jessica Padilla, Jose Santiso, Arie Ruzin, Anne Marie Gonçalves, Jurgen von Bardeleben, Gérard Guillot, Yves Dumont, Amador Pérez-Tomás, Ekaterine Chikoidze^*

^*Corresponding author for this work

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The room temperature hole conductivity of the ultra-wide bandgap semiconductor β-Ga₂O₃ is a pre-requisite for developing the next-generation electronic and optoelectronic devices based on this oxide. In this work, high-quality p-type β-Ga₂O₃ thin films grown on r-plane sapphire substrate by metalorganic chemical vapor deposition (MOCVD) exhibit ρ = 5 × 10⁴ Ω·cm resistivity at room temperature. A low activation energy of conductivity as E_a2 = 170 ± 2 meV was determined, associated to the V_O⁺⁺−V_Ga⁻native acceptor defect complex. Further, taking advantage of cation (Zn) doping, the conductivity of Ga₂O₃:Zn film was remarkably increased by three orders of magnitude, showing a long-time stable room-temperature hole conductivity with the conductivity activation energy of around 86 meV. V_O⁺⁺−Zn_Ga⁻ defect complex has been proposed as a corresponding shallow acceptor.

Original language	English
Article number	172454
Journal	Journal of Alloys and Compounds
Volume	969
DOIs	https://doi.org/10.1016/j.jallcom.2023.172454
State	Published - 25 Dec 2023

Keywords

Electronic properties
Point defect
Ultra-wide band gap semiconductor
β-GaO

Access to Document

10.1016/j.jallcom.2023.172454

Cite this

Chi, Z., Sartel, C., Zheng, Y., Modak, S., Chernyak, L., Schaefer, C. M., Padilla, J., Santiso, J., Ruzin, A., Gonçalves, A. M., von Bardeleben, J., Guillot, G., Dumont, Y., Pérez-Tomás, A., & Chikoidze, E. (2023). Native defects association enabled room-temperature p-type conductivity in β-Ga₂O₃. Journal of Alloys and Compounds, 969, Article 172454. https://doi.org/10.1016/j.jallcom.2023.172454

@article{b5b0bd7ef1b74878af39c32bfeb039f2,

title = "Native defects association enabled room-temperature p-type conductivity in β-Ga2O3",

abstract = "The room temperature hole conductivity of the ultra-wide bandgap semiconductor β-Ga2O3 is a pre-requisite for developing the next-generation electronic and optoelectronic devices based on this oxide. In this work, high-quality p-type β-Ga2O3 thin films grown on r-plane sapphire substrate by metalorganic chemical vapor deposition (MOCVD) exhibit ρ = 5 × 104 Ω·cm resistivity at room temperature. A low activation energy of conductivity as Ea2 = 170 ± 2 meV was determined, associated to the VO++−VGa−native acceptor defect complex. Further, taking advantage of cation (Zn) doping, the conductivity of Ga2O3:Zn film was remarkably increased by three orders of magnitude, showing a long-time stable room-temperature hole conductivity with the conductivity activation energy of around 86 meV. VO++−ZnGa− defect complex has been proposed as a corresponding shallow acceptor.",

keywords = "Electronic properties, Point defect, Ultra-wide band gap semiconductor, β-GaO",

author = "Zeyu Chi and Corinne Sartel and Yunlin Zheng and Sushrut Modak and Leonid Chernyak and Schaefer, {Christian M.} and Jessica Padilla and Jose Santiso and Arie Ruzin and Gon{\c c}alves, {Anne Marie} and {von Bardeleben}, Jurgen and G{\'e}rard Guillot and Yves Dumont and Amador P{\'e}rez-Tom{\'a}s and Ekaterine Chikoidze",

note = "Publisher Copyright: {\textcopyright} 2023 Elsevier B.V.",

year = "2023",

month = dec,

day = "25",

doi = "10.1016/j.jallcom.2023.172454",

language = "אנגלית",

volume = "969",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier B.V.",

}

Chi, Z, Sartel, C, Zheng, Y, Modak, S, Chernyak, L, Schaefer, CM, Padilla, J, Santiso, J, Ruzin, A, Gonçalves, AM, von Bardeleben, J, Guillot, G, Dumont, Y, Pérez-Tomás, A & Chikoidze, E 2023, 'Native defects association enabled room-temperature p-type conductivity in β-Ga₂O₃', Journal of Alloys and Compounds, vol. 969, 172454. https://doi.org/10.1016/j.jallcom.2023.172454

TY - JOUR

T1 - Native defects association enabled room-temperature p-type conductivity in β-Ga2O3

AU - Chi, Zeyu

AU - Sartel, Corinne

AU - Zheng, Yunlin

AU - Modak, Sushrut

AU - Chernyak, Leonid

AU - Schaefer, Christian M.

AU - Padilla, Jessica

AU - Santiso, Jose

AU - Ruzin, Arie

AU - Gonçalves, Anne Marie

AU - von Bardeleben, Jurgen

AU - Guillot, Gérard

AU - Dumont, Yves

AU - Pérez-Tomás, Amador

AU - Chikoidze, Ekaterine

PY - 2023/12/25

Y1 - 2023/12/25

N2 - The room temperature hole conductivity of the ultra-wide bandgap semiconductor β-Ga2O3 is a pre-requisite for developing the next-generation electronic and optoelectronic devices based on this oxide. In this work, high-quality p-type β-Ga2O3 thin films grown on r-plane sapphire substrate by metalorganic chemical vapor deposition (MOCVD) exhibit ρ = 5 × 104 Ω·cm resistivity at room temperature. A low activation energy of conductivity as Ea2 = 170 ± 2 meV was determined, associated to the VO++−VGa−native acceptor defect complex. Further, taking advantage of cation (Zn) doping, the conductivity of Ga2O3:Zn film was remarkably increased by three orders of magnitude, showing a long-time stable room-temperature hole conductivity with the conductivity activation energy of around 86 meV. VO++−ZnGa− defect complex has been proposed as a corresponding shallow acceptor.

AB - The room temperature hole conductivity of the ultra-wide bandgap semiconductor β-Ga2O3 is a pre-requisite for developing the next-generation electronic and optoelectronic devices based on this oxide. In this work, high-quality p-type β-Ga2O3 thin films grown on r-plane sapphire substrate by metalorganic chemical vapor deposition (MOCVD) exhibit ρ = 5 × 104 Ω·cm resistivity at room temperature. A low activation energy of conductivity as Ea2 = 170 ± 2 meV was determined, associated to the VO++−VGa−native acceptor defect complex. Further, taking advantage of cation (Zn) doping, the conductivity of Ga2O3:Zn film was remarkably increased by three orders of magnitude, showing a long-time stable room-temperature hole conductivity with the conductivity activation energy of around 86 meV. VO++−ZnGa− defect complex has been proposed as a corresponding shallow acceptor.

KW - Electronic properties

KW - Point defect

KW - Ultra-wide band gap semiconductor

KW - β-GaO

UR - http://www.scopus.com/inward/record.url?scp=85173222883&partnerID=8YFLogxK

U2 - 10.1016/j.jallcom.2023.172454

DO - 10.1016/j.jallcom.2023.172454

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:85173222883

SN - 0925-8388

VL - 969

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

M1 - 172454

ER -

Native defects association enabled room-temperature p-type conductivity in β-Ga₂O₃

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this