Native defects association enabled room-temperature p-type conductivity in β-Ga2O3

Zeyu Chi, Corinne Sartel, Yunlin Zheng, Sushrut Modak, Leonid Chernyak, Christian M. Schaefer, Jessica Padilla, Jose Santiso, Arie Ruzin, Anne Marie Gonçalves, Jurgen von Bardeleben, Gérard Guillot, Yves Dumont, Amador Pérez-Tomás, Ekaterine Chikoidze*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The room temperature hole conductivity of the ultra-wide bandgap semiconductor β-Ga2O3 is a pre-requisite for developing the next-generation electronic and optoelectronic devices based on this oxide. In this work, high-quality p-type β-Ga2O3 thin films grown on r-plane sapphire substrate by metalorganic chemical vapor deposition (MOCVD) exhibit ρ = 5 × 104 Ω·cm resistivity at room temperature. A low activation energy of conductivity as Ea2 = 170 ± 2 meV was determined, associated to the VO++−VGanative acceptor defect complex. Further, taking advantage of cation (Zn) doping, the conductivity of Ga2O3:Zn film was remarkably increased by three orders of magnitude, showing a long-time stable room-temperature hole conductivity with the conductivity activation energy of around 86 meV. VO++−ZnGa defect complex has been proposed as a corresponding shallow acceptor.

Original languageEnglish
Article number172454
JournalJournal of Alloys and Compounds
Volume969
DOIs
StatePublished - 25 Dec 2023

Funding

FundersFunder number
North Atlantic Treaty OrganizationSPS MYP G5748
University of Central Florida
Agence Nationale de la RechercheCE-50 N0015–01
United States-Israel Binational Science Foundation2018010
Tel Aviv University
Centre National de la Recherche Scientifique

    Keywords

    • Electronic properties
    • Point defect
    • Ultra-wide band gap semiconductor
    • β-GaO

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