Nano-scale potential profiles of silicon particle detectors measured by atomic force microscopy

A. Ruzin*, N. Croitoru, G. Lubarsky, Y. Rosenwaks

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

This is a report of preliminary results of Atomic Force Microscopy and Kelvin Probe Force Microscopy measurements performed on high-resistivity silicon particle detectors. All the measured devices were PIN structures. The measurements were performed on cleaved surfaces of non-irradiated as well as irradiated devices. The results indicate that the electric field under the junction contact is non-uniform at thermal equilibrium. The results also show a drastic variation in Contact Potential Difference after irradiation.

Original languageEnglish
Pages (from-to)229-232
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume461
Issue number1-3
DOIs
StatePublished - 1 Apr 2001

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