n-Channel MOS Transistors in Mercury-Cadmium-Telluride

Avinoam Kolodny, Yosi J. Shacham-Diamand, I. Kidron

Research output: Contribution to journalArticlepeer-review


n-channel MOS transistors operating at 77 K have been realized in Hg0.71 Cd0.29 Te with ion-implanted source and drain junctions. Enhancement-mode transistors were made with evaporated ZnS as a gate insulator, and depletion-mode transistors were made using a native oxide of mercury-cadmlum-telluride. The devices exhibit surface mobility as high as 1.5 × 104 cm2 · V−1 · s−1. Current-voltage characteristics and capacitance-voltage data are presented and analyzed.

Original languageEnglish
Pages (from-to)591-595
Number of pages5
JournalIEEE Transactions on Electron Devices
Issue number3
StatePublished - Mar 1980
Externally publishedYes


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