TY - JOUR
T1 - n-Channel MOS Transistors in Mercury-Cadmium-Telluride
AU - Kolodny, Avinoam
AU - Shacham-Diamand, Yosi J.
AU - Kidron, I.
PY - 1980/3
Y1 - 1980/3
N2 - n-channel MOS transistors operating at 77 K have been realized in Hg0.71 Cd0.29 Te with ion-implanted source and drain junctions. Enhancement-mode transistors were made with evaporated ZnS as a gate insulator, and depletion-mode transistors were made using a native oxide of mercury-cadmlum-telluride. The devices exhibit surface mobility as high as 1.5 × 104 cm2 · V−1 · s−1. Current-voltage characteristics and capacitance-voltage data are presented and analyzed.
AB - n-channel MOS transistors operating at 77 K have been realized in Hg0.71 Cd0.29 Te with ion-implanted source and drain junctions. Enhancement-mode transistors were made with evaporated ZnS as a gate insulator, and depletion-mode transistors were made using a native oxide of mercury-cadmlum-telluride. The devices exhibit surface mobility as high as 1.5 × 104 cm2 · V−1 · s−1. Current-voltage characteristics and capacitance-voltage data are presented and analyzed.
UR - http://www.scopus.com/inward/record.url?scp=0018996833&partnerID=8YFLogxK
U2 - 10.1109/T-ED.1980.19904
DO - 10.1109/T-ED.1980.19904
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AN - SCOPUS:0018996833
SN - 0018-9383
VL - 27
SP - 591
EP - 595
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 3
ER -