TY - JOUR
T1 - MOS isolation technology
AU - Oldham, W. G.
AU - Shacham-Diamand, Y.
AU - Pai, P. L.
AU - Young, K.
AU - Sutardja, P.
N1 - Funding Information:
This work was sponsored by The National Science Foundation under Grant ECS 81-06243, The Semiconductor Research Corporation, and a Grant from Control Data Corporation under the MICRO program.
PY - 1985/3
Y1 - 1985/3
N2 - Local oxidation with self-aligned field threshold implant has become pervasive as the technique for device isolation in Si-gate technology. As NMOS is replaced by CMOS, this LOCOS technology has been adapted, though with difficulty. Primarily because of poor space utilization, alternatives to LOCOS are now being pursued in a number of laboratories. In this paper the goals and limitations of isolation technology are reviewed, and several alternatives examined. Based on this examination, we suggest that in the near future, evolutionary advances in LOCOS will be adequate. In the longer term, the greatest promise is offered by a technique involving etching and refilling trenches in the substrate.
AB - Local oxidation with self-aligned field threshold implant has become pervasive as the technique for device isolation in Si-gate technology. As NMOS is replaced by CMOS, this LOCOS technology has been adapted, though with difficulty. Primarily because of poor space utilization, alternatives to LOCOS are now being pursued in a number of laboratories. In this paper the goals and limitations of isolation technology are reviewed, and several alternatives examined. Based on this examination, we suggest that in the near future, evolutionary advances in LOCOS will be adequate. In the longer term, the greatest promise is offered by a technique involving etching and refilling trenches in the substrate.
UR - http://www.scopus.com/inward/record.url?scp=46549100853&partnerID=8YFLogxK
U2 - 10.1016/0378-4363(85)90554-6
DO - 10.1016/0378-4363(85)90554-6
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AN - SCOPUS:46549100853
SN - 0378-4363
VL - 129
SP - 53
EP - 65
JO - Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics
JF - Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics
IS - 1-3
ER -