MOS ISOLATION TECHNOLOGY.

W. G. Oldham; Y. Shacham-Diamand; P. L. Pai; K. Young; P. Sutardja

MOS ISOLATION TECHNOLOGY.

W. G. Oldham^*, Y. Shacham-Diamand, P. L. Pai, K. Young, P. Sutardja

^*Corresponding author for this work

University of California at Berkeley

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Local oxidation with self-aligned field threshold implant has become pervasive as the technique for device isolation in Si-gate technology. As NMOS is replaced by CMOS, this LOCOS technology has been adapted, though with difficulty. Primarily because of poor space utilization, alternatives to LOCOS are now being pursued in a number of laboratories. In this paper the goals and limitations of isolation technology are reviewed, and several alternatives examined. Based on this examination, the authors suggest that in the near future, evolutionary advances in LOCOS will be adequate. In the longer term, the greatest promise is offered by a technique involving etching and refilling trenches in the substrate. 32 refs.

Original language	English
Pages (from-to)	53-65
Number of pages	13
Journal	Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics
Volume	129 B-C
Issue number	1-3
State	Published - Mar 1984
Externally published	Yes
Event	Solid State Devices 1984, Proc of the 14th Eur Solid State Device Res Conf, Incl Solid State Device Technol - Lille, Fr Duration: 10 Sep 1984 → 13 Sep 1984

Funding

Funders	Funder number
Control Data Corporation
National Science Foundation	ECS 81-06243
Semiconductor Research Corporation

Cite this

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title = "MOS ISOLATION TECHNOLOGY.",

abstract = "Local oxidation with self-aligned field threshold implant has become pervasive as the technique for device isolation in Si-gate technology. As NMOS is replaced by CMOS, this LOCOS technology has been adapted, though with difficulty. Primarily because of poor space utilization, alternatives to LOCOS are now being pursued in a number of laboratories. In this paper the goals and limitations of isolation technology are reviewed, and several alternatives examined. Based on this examination, the authors suggest that in the near future, evolutionary advances in LOCOS will be adequate. In the longer term, the greatest promise is offered by a technique involving etching and refilling trenches in the substrate. 32 refs.",

author = "Oldham, {W. G.} and Y. Shacham-Diamand and Pai, {P. L.} and K. Young and P. Sutardja",

note = "Funding Information: This work was sponsored by The National Science Foundation under Grant ECS 81-06243, The Semiconductor Research Corporation, and a Grant from Control Data Corporation under the MICRO program.; Solid State Devices 1984, Proc of the 14th Eur Solid State Device Res Conf, Incl Solid State Device Technol ; Conference date: 10-09-1984 Through 13-09-1984",

year = "1984",

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language = "אנגלית",

volume = "129 B-C",

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journal = "Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics",

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AU - Oldham, W. G.

AU - Shacham-Diamand, Y.

AU - Pai, P. L.

AU - Young, K.

AU - Sutardja, P.

N1 - Funding Information: This work was sponsored by The National Science Foundation under Grant ECS 81-06243, The Semiconductor Research Corporation, and a Grant from Control Data Corporation under the MICRO program.

PY - 1984/3

Y1 - 1984/3

N2 - Local oxidation with self-aligned field threshold implant has become pervasive as the technique for device isolation in Si-gate technology. As NMOS is replaced by CMOS, this LOCOS technology has been adapted, though with difficulty. Primarily because of poor space utilization, alternatives to LOCOS are now being pursued in a number of laboratories. In this paper the goals and limitations of isolation technology are reviewed, and several alternatives examined. Based on this examination, the authors suggest that in the near future, evolutionary advances in LOCOS will be adequate. In the longer term, the greatest promise is offered by a technique involving etching and refilling trenches in the substrate. 32 refs.

AB - Local oxidation with self-aligned field threshold implant has become pervasive as the technique for device isolation in Si-gate technology. As NMOS is replaced by CMOS, this LOCOS technology has been adapted, though with difficulty. Primarily because of poor space utilization, alternatives to LOCOS are now being pursued in a number of laboratories. In this paper the goals and limitations of isolation technology are reviewed, and several alternatives examined. Based on this examination, the authors suggest that in the near future, evolutionary advances in LOCOS will be adequate. In the longer term, the greatest promise is offered by a technique involving etching and refilling trenches in the substrate. 32 refs.

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AN - SCOPUS:0021393404

SN - 0165-1757

VL - 129 B-C

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JO - Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics

JF - Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics

IS - 1-3

T2 - Solid State Devices 1984, Proc of the 14th Eur Solid State Device Res Conf, Incl Solid State Device Technol

Y2 - 10 September 1984 through 13 September 1984

ER -

MOS ISOLATION TECHNOLOGY.

Abstract

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