MOS ISOLATION TECHNOLOGY.

W. G. Oldham, Y. Shacham-Diamand, P. L. Pai, K. Young, P. Sutardja

Research output: Contribution to journalConference articlepeer-review

Abstract

Local oxidation with self-aligned field threshold implant has become pervasive as the technique for device isolation in Si-gate technology. As NMOS is replaced by CMOS, this LOCOS technology has been adapted, though with difficulty. Primarily because of poor space utilization, alternatives to LOCOS are now being pursued in a number of laboratories. In this paper the goals and limitations of isolation technology are reviewed, and several alternatives examined. Based on this examination, the authors suggest that in the near future, evolutionary advances in LOCOS will be adequate. In the longer term, the greatest promise is offered by a technique involving etching and refilling trenches in the substrate. 32 refs.

Original languageEnglish
Pages (from-to)53-65
Number of pages13
JournalPhysica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics
Volume129 B-C
Issue number1-3
StatePublished - Mar 1984
Externally publishedYes
EventSolid State Devices 1984, Proc of the 14th Eur Solid State Device Res Conf, Incl Solid State Device Technol - Lille, Fr
Duration: 10 Sep 198413 Sep 1984

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