Morphological evolution of epitaxial cobalt-semiconductor compound layers during growth in a scanning tunneling microscope

I. Goldfarb; G. A.D. Briggs

doi:10.1116/1.1491555

Morphological evolution of epitaxial cobalt-semiconductor compound layers during growth in a scanning tunneling microscope

I. Goldfarb^*, G. A.D. Briggs

^*Corresponding author for this work

Department of Materials Science and Engineering

University of Oxford

Research output: Contribution to journal › Conference article › peer-review

12 Scopus citations

Abstract

An attempt is made to shed light on the factors that affect surface morphology of ultrathin heteroepitaxial cobalt-semiconductor compound layers in relation to the kinetics of phase formation in those layers. An explanation is proposed, which relates the layer's surface morphology to the layer-substrate mismatch as a function of a particular sequence of kinetically driven phase-formation processes.

Original language	English
Pages (from-to)	1419-1426
Number of pages	8
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	4
DOIs	https://doi.org/10.1116/1.1491555
State	Published - Jul 2002
Event	Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - Santa Fe, NM, United States Duration: 6 Jan 2002 → 10 Jan 2002

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@article{7f5a0f7291a24dd6b23f7d97a77273b7,

title = "Morphological evolution of epitaxial cobalt-semiconductor compound layers during growth in a scanning tunneling microscope",

abstract = "An attempt is made to shed light on the factors that affect surface morphology of ultrathin heteroepitaxial cobalt-semiconductor compound layers in relation to the kinetics of phase formation in those layers. An explanation is proposed, which relates the layer's surface morphology to the layer-substrate mismatch as a function of a particular sequence of kinetically driven phase-formation processes.",

author = "I. Goldfarb and Briggs, \{G. A.D.\}",

year = "2002",

month = jul,

doi = "10.1116/1.1491555",

language = "אנגלית",

volume = "20",

pages = "1419--1426",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "4",

note = "Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces ; Conference date: 06-01-2002 Through 10-01-2002",

}

TY - JOUR

T1 - Morphological evolution of epitaxial cobalt-semiconductor compound layers during growth in a scanning tunneling microscope

AU - Goldfarb, I.

AU - Briggs, G. A.D.

PY - 2002/7

Y1 - 2002/7

N2 - An attempt is made to shed light on the factors that affect surface morphology of ultrathin heteroepitaxial cobalt-semiconductor compound layers in relation to the kinetics of phase formation in those layers. An explanation is proposed, which relates the layer's surface morphology to the layer-substrate mismatch as a function of a particular sequence of kinetically driven phase-formation processes.

AB - An attempt is made to shed light on the factors that affect surface morphology of ultrathin heteroepitaxial cobalt-semiconductor compound layers in relation to the kinetics of phase formation in those layers. An explanation is proposed, which relates the layer's surface morphology to the layer-substrate mismatch as a function of a particular sequence of kinetically driven phase-formation processes.

UR - https://www.scopus.com/pages/publications/0035982797

U2 - 10.1116/1.1491555

DO - 10.1116/1.1491555

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.conferencearticle???

AN - SCOPUS:0035982797

SN - 1071-1023

VL - 20

SP - 1419

EP - 1426

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

T2 - Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces

Y2 - 6 January 2002 through 10 January 2002

ER -

Morphological evolution of epitaxial cobalt-semiconductor compound layers during growth in a scanning tunneling microscope

Abstract

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