Morphological evolution of epitaxial cobalt-semiconductor compound layers during growth in a scanning tunneling microscope

I. Goldfarb; G. A.D. Briggs

doi:10.1116/1.1491555

Morphological evolution of epitaxial cobalt-semiconductor compound layers during growth in a scanning tunneling microscope

I. Goldfarb^*, G. A.D. Briggs

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

An attempt is made to shed light on the factors that affect surface morphology of ultrathin heteroepitaxial cobalt-semiconductor compound layers in relation to the kinetics of phase formation in those layers. An explanation is proposed, which relates the layer's surface morphology to the layer-substrate mismatch as a function of a particular sequence of kinetically driven phase-formation processes.

Original language	English
Pages (from-to)	1419-1426
Number of pages	8
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	4
DOIs	https://doi.org/10.1116/1.1491555
State	Published - Jul 2002
Event	Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - Santa Fe, NM, United States Duration: 6 Jan 2002 → 10 Jan 2002

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10.1116/1.1491555

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abstract = "An attempt is made to shed light on the factors that affect surface morphology of ultrathin heteroepitaxial cobalt-semiconductor compound layers in relation to the kinetics of phase formation in those layers. An explanation is proposed, which relates the layer's surface morphology to the layer-substrate mismatch as a function of a particular sequence of kinetically driven phase-formation processes.",

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Morphological evolution of epitaxial cobalt-semiconductor compound layers during growth in a scanning tunneling microscope

Abstract

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