Monolithic focal-plane cell in InSb

Avishai Kepten, Yosef Y. Shacham-Diamand, S. E. Schacham

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A monolithic infrared focal plane array where photo-diodes and field effect transistors are integrated is presented. The photodiode is connected directly to the integrating capacitor while the transistor controls the integrated signal-charge transfer to the video line. The operating modes of such array are discussed and especially the pseudo-staring mode. Such arrays were produced and their system performance were investigated. The detectors average specific detectivity D*λ(f/no = 1, λ = 3.83 μm) was equal to 1.3 × 1011 [cm-Hz 1/2 /W] and was used calculate the Noise Equivalent Temperature Difference (NETD) as a function of the number of detectors and vectors. The NETD was estimated to be of 0.039 K for an optimal 5 vectors array.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherPubl by Society of Photo-Optical Instrumentation Engineers
Pages277-286
Number of pages10
ISBN (Print)0819409081, 9780819409089
DOIs
StatePublished - 1992
Externally publishedYes
EventInfrared Detectors: State of the Art - San Diego, CA, USA
Duration: 19 Jul 199219 Jul 1992

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume1735
ISSN (Print)0277-786X

Conference

ConferenceInfrared Detectors: State of the Art
CitySan Diego, CA, USA
Period19/07/9219/07/92

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