Modelling radiation damage to pixel sensors in the ATLAS detector

The ATLAS collaboration

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 1015 1 MeV neq/cm2, while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 (≤ 10 1 MeV neq/cm2).

Original languageEnglish
Article numberP06012
JournalJournal of Instrumentation
Volume14
Issue number6
DOIs
StatePublished - 11 Jun 2019

Funding

FundersFunder number
Departamento Administrativo de Ciencia, Tecnología e Innovación (COLCIENCIAS)
BSF-NSF
Agence Nationale de la Recherche
Australian Research Council
Centre National pour la Recherche Scientifique et Technique
Fundação para a Ciência e a Tecnologia
Comisión Nacional de Investigación Científica y Tecnológica
National Stroke Foundation
Narodowe Centrum Nauki
CEA-DRF
H2020 Marie Skłodowska-Curie Actions
Japan Society for the Promotion of Science
INFN-CNAF
Nederlandse Organisatie voor Wetenschappelijk Onderzoek
Ministry of Science and Technology, Taiwan
Israel Science Foundation
Wallenberg Foundation
Leverhulme Trust
Staatssekretariat für Bildung, Forschung und Innovation
Javna Agencija za Raziskovalno Dejavnost RS
Generalitat de Catalunya
Instituto Nazionale di Fisica Nucleare
Bundesministerium für Wissenschaft, Forschung und Wirtschaft
Austrian Science Fund
Department of Science and Technology, Ministry of Science and Technology, India
Ministerio de Economía y Competitividad
ASGC (Taiwan)
Bundesministerium für Bildung und Forschung
Canada Foundation for Innovation
Helmholtz-Gemeinschaft
Danmarks Grundforskningsfond
Conselho Nacional de Desenvolvimento Científico e Tecnológico
Czech Republic
Karlsruhe Institute of Technology
GridKA
MIZŠ
Deutsche Forschungsgemeinschaft
Neurosurgical Research Foundation
Ministarstvo Prosvete, Nauke i Tehnološkog Razvoja
U.S. Department of Energy
European Cooperation in Science and Technology
EU-ESF
RGC
Fundação de Amparo à Pesquisa do Estado de São Paulo
MES of Russia
National Research Center "Kurchatov Institute"
Institutul de Fizică Atomică
Natural Sciences and Engineering Research Council of Canada
General Secretariat for Research and Technology
Nella and Leon Benoziyo Center for Neurological Diseases, Weizmann Institute of Science
Cantons of Bern and Geneva
Chinese Academy of Sciences
Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung
VSC CR
Glycemic Index Foundation
MNE
Agencia Nacional de Promoción Científica y Tecnológica
Royal Society
European Research Council
European Regional Development Fund
Ministerstwo Edukacji i Nauki
IRFU
CERN
Joint Institute for Nuclear Research
Ministerstvo Školství, Mládeže a Tělovýchovy
National Research Council Canada
Brookhaven National Laboratory
Alexander von Humboldt-Stiftung
Multiple Sclerosis Scientific Research Foundation
Council on grants of the President of the Russian Federation
British Columbia Knowledge Development Fund
Ministry of Education, Culture, Sports, Science and Technology
National Natural Science Foundation of China
Azərbaycan Milli Elmlər Akademiyası
Not addedST/L006162/1, ST/N000307/1, ST/N000331/1
Horizon 2020 Framework Programme754510
NDGFCC-IN2P3
DNSRCIN2P3-CNRS

    Keywords

    • Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc)
    • Radiation-hard detectors
    • Solid state detectors

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