Modeling and characterization of CMOS readout circuits for monolithic uncooled IR thermoelectric sensors

E. Socher*, O. Bochobza-Degani, Y. Nemirovsky

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

CMOS readout for integrated thermoelectric sensors was modelled, designed and realized. Readout circuits based on DC-coupling and correlated-double-sampling (CDS) technique were considered. The various noise contributions of the readout circuits were analysed and modelled. The effect of the CDS circuit of the noise of the sensor itself was also modelled. CMOS chips containing both IR sensors and readout circuits were realized and measurement results corroborate with the models, leading to input referred noise of 0.5 μV in a 300 Hz bandwidth.

Original languageEnglish
Title of host publication21st IEEE Convention of the Electrical and Electronic Engineers in Israel, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages421-424
Number of pages4
ISBN (Electronic)0780358422, 9780780358423
DOIs
StatePublished - 2000
Externally publishedYes
Event21st IEEE Convention of the Electrical and Electronic Engineers in Israel, IEEEI 2000 - Tel-Aviv, Israel
Duration: 11 Apr 200012 Apr 2000

Publication series

Name21st IEEE Convention of the Electrical and Electronic Engineers in Israel, Proceedings

Conference

Conference21st IEEE Convention of the Electrical and Electronic Engineers in Israel, IEEEI 2000
Country/TerritoryIsrael
CityTel-Aviv
Period11/04/0012/04/00

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