TY - GEN
T1 - Modeling and characterization of CMOS readout circuits for monolithic uncooled IR thermoelectric sensors
AU - Socher, E.
AU - Bochobza-Degani, O.
AU - Nemirovsky, Y.
N1 - Publisher Copyright:
© 2002 IEEE.
PY - 2000
Y1 - 2000
N2 - CMOS readout for integrated thermoelectric sensors was modelled, designed and realized. Readout circuits based on DC-coupling and correlated-double-sampling (CDS) technique were considered. The various noise contributions of the readout circuits were analysed and modelled. The effect of the CDS circuit of the noise of the sensor itself was also modelled. CMOS chips containing both IR sensors and readout circuits were realized and measurement results corroborate with the models, leading to input referred noise of 0.5 μV in a 300 Hz bandwidth.
AB - CMOS readout for integrated thermoelectric sensors was modelled, designed and realized. Readout circuits based on DC-coupling and correlated-double-sampling (CDS) technique were considered. The various noise contributions of the readout circuits were analysed and modelled. The effect of the CDS circuit of the noise of the sensor itself was also modelled. CMOS chips containing both IR sensors and readout circuits were realized and measurement results corroborate with the models, leading to input referred noise of 0.5 μV in a 300 Hz bandwidth.
UR - http://www.scopus.com/inward/record.url?scp=49549107826&partnerID=8YFLogxK
U2 - 10.1109/EEEI.2000.924456
DO - 10.1109/EEEI.2000.924456
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AN - SCOPUS:49549107826
T3 - 21st IEEE Convention of the Electrical and Electronic Engineers in Israel, Proceedings
SP - 421
EP - 424
BT - 21st IEEE Convention of the Electrical and Electronic Engineers in Israel, Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 21st IEEE Convention of the Electrical and Electronic Engineers in Israel, IEEEI 2000
Y2 - 11 April 2000 through 12 April 2000
ER -