Abstract
A kinetic model for the metalorganic chemical vapor deposition (MOCVD) growth of CdTe over a wide temperature range is presented. The model yields the growth rate as a function of the gas-phase concentrations of the constituents. The model is corroborated with experimental results obtained by the MOCVD growth of CdTe at 380°C. The major features of the model are the observed two-step surface-controlled pyrolysis and surface saturation, leading initially to a growth rate that increases with the square root of the concentrations of the reacting species and subsequently to a decrease of the growth rate as the concentrations increase. At even higher concentrations, an additional increase of growth rate is observed and modeled.
| Original language | English |
|---|---|
| Pages (from-to) | 609-613 |
| Number of pages | 5 |
| Journal | Journal of Electronic Materials |
| Volume | 20 |
| Issue number | 8 |
| State | Published - Aug 1991 |
| Externally published | Yes |