Abstract
Electronic energy transfer (EET) within an impurity band in a Bethe lattice was investigated, considering Anderson localization due to inhomogeneous broadening of the diagonal site-excitation energies. Explicit expressions were derived for the critical concentration C, as well as for the minimmum diffusion coefficient in extended states. Model calculations elucidate the difference between critical behavior and a kinetic threshold for EET.
Original language | English |
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Pages (from-to) | 9-13 |
Number of pages | 5 |
Journal | Chemical Physics Letters |
Volume | 62 |
Issue number | 1 |
DOIs | |
State | Published - 15 Mar 1979 |