Microstructure and material properties of electroless Co(W,B) thin film

Vadim Bogush*, Yelena Sverdlov, Hila Einati, Arulkumar Shanmugasundram, Timothy Weidman, Yosi Shacham-Diamand

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations


This paper presents study of electroless Co(W,B) thin films that was deposited on Cu surface using Pd-free activation method. Deposition was performed from two solutions with different tungsten sources and concentration that affects the film composition and properties. Crystalline structure, morphology, composition and electrical properties of Co(W,B) were studied as function of tungsten concentration in solution and post-deposition vacuum annealing temperature. It's shown that introducing of boron leads to formation of deposits with nanocrystalline or amorphous structure that does not change significantly during annealing. Such films with advanced barrier properties are considered as a possible candidate for application as a capping layer for sub-90 nm Cu interconnects.

Original languageEnglish
Pages (from-to)843-847
Number of pages5
JournalAdvanced Metallization Conference (AMC)
StatePublished - 2004
EventAdvanced Metallization Conference 2004, AMC 2004 - San Diego, CA, United States
Duration: 19 Oct 200421 Oct 2004


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