Microstructure and material properties of electroless Co(W,B) thin film

Vadim Bogush; Yelena Sverdlov; Hila Einati; Arulkumar Shanmugasundram; Timothy Weidman; Yosi Shacham-Diamand

Microstructure and material properties of electroless Co(W,B) thin film

Vadim Bogush^*, Yelena Sverdlov, Hila Einati, Arulkumar Shanmugasundram, Timothy Weidman, Yosi Shacham-Diamand

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

This paper presents study of electroless Co(W,B) thin films that was deposited on Cu surface using Pd-free activation method. Deposition was performed from two solutions with different tungsten sources and concentration that affects the film composition and properties. Crystalline structure, morphology, composition and electrical properties of Co(W,B) were studied as function of tungsten concentration in solution and post-deposition vacuum annealing temperature. It's shown that introducing of boron leads to formation of deposits with nanocrystalline or amorphous structure that does not change significantly during annealing. Such films with advanced barrier properties are considered as a possible candidate for application as a capping layer for sub-90 nm Cu interconnects.

Original language	English
Pages (from-to)	843-847
Number of pages	5
Journal	Advanced Metallization Conference (AMC)
State	Published - 2004
Event	Advanced Metallization Conference 2004, AMC 2004 - San Diego, CA, United States Duration: 19 Oct 2004 → 21 Oct 2004

Cite this

@article{c954787a937143948317ce3d9dc367fc,

title = "Microstructure and material properties of electroless Co(W,B) thin film",

abstract = "This paper presents study of electroless Co(W,B) thin films that was deposited on Cu surface using Pd-free activation method. Deposition was performed from two solutions with different tungsten sources and concentration that affects the film composition and properties. Crystalline structure, morphology, composition and electrical properties of Co(W,B) were studied as function of tungsten concentration in solution and post-deposition vacuum annealing temperature. It's shown that introducing of boron leads to formation of deposits with nanocrystalline or amorphous structure that does not change significantly during annealing. Such films with advanced barrier properties are considered as a possible candidate for application as a capping layer for sub-90 nm Cu interconnects.",

author = "Vadim Bogush and Yelena Sverdlov and Hila Einati and Arulkumar Shanmugasundram and Timothy Weidman and Yosi Shacham-Diamand",

year = "2004",

language = "אנגלית",

pages = "843--847",

journal = "Advanced Metallization Conference (AMC)",

issn = "1540-1766",

publisher = "Materials Research Society",

note = "Advanced Metallization Conference 2004, AMC 2004 ; Conference date: 19-10-2004 Through 21-10-2004",

}

TY - JOUR

T1 - Microstructure and material properties of electroless Co(W,B) thin film

AU - Bogush, Vadim

AU - Sverdlov, Yelena

AU - Einati, Hila

AU - Shanmugasundram, Arulkumar

AU - Weidman, Timothy

AU - Shacham-Diamand, Yosi

PY - 2004

Y1 - 2004

N2 - This paper presents study of electroless Co(W,B) thin films that was deposited on Cu surface using Pd-free activation method. Deposition was performed from two solutions with different tungsten sources and concentration that affects the film composition and properties. Crystalline structure, morphology, composition and electrical properties of Co(W,B) were studied as function of tungsten concentration in solution and post-deposition vacuum annealing temperature. It's shown that introducing of boron leads to formation of deposits with nanocrystalline or amorphous structure that does not change significantly during annealing. Such films with advanced barrier properties are considered as a possible candidate for application as a capping layer for sub-90 nm Cu interconnects.

AB - This paper presents study of electroless Co(W,B) thin films that was deposited on Cu surface using Pd-free activation method. Deposition was performed from two solutions with different tungsten sources and concentration that affects the film composition and properties. Crystalline structure, morphology, composition and electrical properties of Co(W,B) were studied as function of tungsten concentration in solution and post-deposition vacuum annealing temperature. It's shown that introducing of boron leads to formation of deposits with nanocrystalline or amorphous structure that does not change significantly during annealing. Such films with advanced barrier properties are considered as a possible candidate for application as a capping layer for sub-90 nm Cu interconnects.

UR - http://www.scopus.com/inward/record.url?scp=23844476787&partnerID=8YFLogxK

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.conferencearticle???

AN - SCOPUS:23844476787

SN - 1540-1766

SP - 843

EP - 847

JO - Advanced Metallization Conference (AMC)

JF - Advanced Metallization Conference (AMC)

T2 - Advanced Metallization Conference 2004, AMC 2004

Y2 - 19 October 2004 through 21 October 2004

ER -

Microstructure and material properties of electroless Co(W,B) thin film

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