TY - GEN
T1 - Micromechanical Bistable Flow Sensors
AU - Krylov, Slava
AU - Kessler, Yoav
AU - Benjamin, Erez
AU - Torteman, Ben
AU - Liberzon, Alex
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/12/26
Y1 - 2018/12/26
N2 - Bistable microstructures demonstrate enhanced responsiveness to external stimuli in the vicinity of the critical configurations that separate stable and unstable states. This makes these devices attractive candidates for implementation in sensors. Here, after a short review of existing bistability-based sensing approaches, we explore the applicability of electrostatically and electro thermally actuated micro beams as flow sensors. Double clamped curved ≈ 1000 μ m long, ≈ 2.8μ m wide and ≈50 μ m thick beams, deep reactive ion etched (DRIE) from a silicon on insulator (SOI) wafer were subject to an air flow in the direction perpendicular to the beam. We show theoretically and experimentally that both the flow-induced cooling of the Joule's heated structure and the drag force reduce the critical snap-through (ST) voltages. The absolute and relative measured sensitivities of the ST voltage of ≈ 1.9 Vsm -1 and ≈ 2.6 % sm -1 , respectively, are consistent with the Reduced Order (RO) Galerkin model predictions.
AB - Bistable microstructures demonstrate enhanced responsiveness to external stimuli in the vicinity of the critical configurations that separate stable and unstable states. This makes these devices attractive candidates for implementation in sensors. Here, after a short review of existing bistability-based sensing approaches, we explore the applicability of electrostatically and electro thermally actuated micro beams as flow sensors. Double clamped curved ≈ 1000 μ m long, ≈ 2.8μ m wide and ≈50 μ m thick beams, deep reactive ion etched (DRIE) from a silicon on insulator (SOI) wafer were subject to an air flow in the direction perpendicular to the beam. We show theoretically and experimentally that both the flow-induced cooling of the Joule's heated structure and the drag force reduce the critical snap-through (ST) voltages. The absolute and relative measured sensitivities of the ST voltage of ≈ 1.9 Vsm -1 and ≈ 2.6 % sm -1 , respectively, are consistent with the Reduced Order (RO) Galerkin model predictions.
UR - http://www.scopus.com/inward/record.url?scp=85060858196&partnerID=8YFLogxK
U2 - 10.1109/ICSENS.2018.8589550
DO - 10.1109/ICSENS.2018.8589550
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AN - SCOPUS:85060858196
T3 - Proceedings of IEEE Sensors
BT - 2018 IEEE SENSORS, SENSORS 2018 - Conference Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 17th IEEE SENSORS Conference, SENSORS 2018
Y2 - 28 October 2018 through 31 October 2018
ER -