Methodology for evaluation of mobility-lifetime product by spectroscopy measurements in CdZnTe spectrometers

A. Ruzin; Y. Nemirovsky

doi:10.1063/1.366218

Methodology for evaluation of mobility-lifetime product by spectroscopy measurements in CdZnTe spectrometers

A. Ruzin^*, Y. Nemirovsky

^*Corresponding author for this work

Technion-Israel Institute of Technology

Research output: Contribution to journal › Review article › peer-review

59 Scopus citations

Abstract

A novel methodology is presented for extraction of the semiconductor electron and hole mobility-lifetime products by x- and γ-ray spectroscopy analysis. The methodology is based on the analysis of spectroscopy results, namely the maximal and the average charge collection efficiencies as discussed below, for different photon energies at various bias voltages. The methodology enables the evaluation of both electron and hole mobility-lifetime products without the need to use α particle measurements. The evaluation is carried out by a single parameter fitting of the models analyzed in this study. Mobility-lifetime products for CdZnTe substrates grown by Bridgman and high pressure Bridgman (HPB) methods are reported and compared. Typical values of μ_e · τ_e = 2· 10-³ μ_h · τ_h = 1 · 10^-5 cm²/V are extracted for HPB grown CdZnTe with 10% Zn concentration. Values of μ_e · τ_e = 9 · 10^-4 and μ_h · τ_h = 1 · 10^-7 cm²/V obtained for CdZnTe with 10% Zn concentration grown by the Bridgman method.

Original language	English
Pages (from-to)	4166-4171
Number of pages	6
Journal	Journal of Applied Physics
Volume	82
Issue number	9
DOIs	https://doi.org/10.1063/1.366218
State	Published - 1 Nov 1997
Externally published	Yes

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title = "Methodology for evaluation of mobility-lifetime product by spectroscopy measurements in CdZnTe spectrometers",

abstract = "A novel methodology is presented for extraction of the semiconductor electron and hole mobility-lifetime products by x- and γ-ray spectroscopy analysis. The methodology is based on the analysis of spectroscopy results, namely the maximal and the average charge collection efficiencies as discussed below, for different photon energies at various bias voltages. The methodology enables the evaluation of both electron and hole mobility-lifetime products without the need to use α particle measurements. The evaluation is carried out by a single parameter fitting of the models analyzed in this study. Mobility-lifetime products for CdZnTe substrates grown by Bridgman and high pressure Bridgman (HPB) methods are reported and compared. Typical values of μe · τe = 2· 10-3 μh · τh = 1 · 10-5 cm2/V are extracted for HPB grown CdZnTe with 10% Zn concentration. Values of μe · τe = 9 · 10-4 and μh · τh = 1 · 10-7 cm2/V obtained for CdZnTe with 10% Zn concentration grown by the Bridgman method.",

author = "A. Ruzin and Y. Nemirovsky",

year = "1997",

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doi = "10.1063/1.366218",

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AU - Ruzin, A.

AU - Nemirovsky, Y.

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N2 - A novel methodology is presented for extraction of the semiconductor electron and hole mobility-lifetime products by x- and γ-ray spectroscopy analysis. The methodology is based on the analysis of spectroscopy results, namely the maximal and the average charge collection efficiencies as discussed below, for different photon energies at various bias voltages. The methodology enables the evaluation of both electron and hole mobility-lifetime products without the need to use α particle measurements. The evaluation is carried out by a single parameter fitting of the models analyzed in this study. Mobility-lifetime products for CdZnTe substrates grown by Bridgman and high pressure Bridgman (HPB) methods are reported and compared. Typical values of μe · τe = 2· 10-3 μh · τh = 1 · 10-5 cm2/V are extracted for HPB grown CdZnTe with 10% Zn concentration. Values of μe · τe = 9 · 10-4 and μh · τh = 1 · 10-7 cm2/V obtained for CdZnTe with 10% Zn concentration grown by the Bridgman method.

AB - A novel methodology is presented for extraction of the semiconductor electron and hole mobility-lifetime products by x- and γ-ray spectroscopy analysis. The methodology is based on the analysis of spectroscopy results, namely the maximal and the average charge collection efficiencies as discussed below, for different photon energies at various bias voltages. The methodology enables the evaluation of both electron and hole mobility-lifetime products without the need to use α particle measurements. The evaluation is carried out by a single parameter fitting of the models analyzed in this study. Mobility-lifetime products for CdZnTe substrates grown by Bridgman and high pressure Bridgman (HPB) methods are reported and compared. Typical values of μe · τe = 2· 10-3 μh · τh = 1 · 10-5 cm2/V are extracted for HPB grown CdZnTe with 10% Zn concentration. Values of μe · τe = 9 · 10-4 and μh · τh = 1 · 10-7 cm2/V obtained for CdZnTe with 10% Zn concentration grown by the Bridgman method.

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Methodology for evaluation of mobility-lifetime product by spectroscopy measurements in CdZnTe spectrometers

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