Metallic transport properties of amorphous nickel-silicon films

R. Rosenbaum; A. Heines; A. Palevski; M. Karpovski; A. Gladkikh; M. Pilosof; A. J. Daneshvar; M. R. Graham; T. Wright; J. T. Nicholls; C. J. Adkins; M. Witcomb; V. Prozesky; W. Przybylowicz; R. Pretorius

doi:10.1088/0953-8984/9/25/008

Metallic transport properties of amorphous nickel-silicon films

R. Rosenbaum^*, A. Heines, A. Palevski, M. Karpovski, A. Gladkikh, M. Pilosof, A. J. Daneshvar, M. R. Graham, T. Wright, J. T. Nicholls, C. J. Adkins, M. Witcomb, V. Prozesky, W. Przybylowicz, R. Pretorius

^*Corresponding author for this work

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Transport properties including conductivity and magnetoconductance have been measured for amorphous nickel-silicon films. This study focuses on metallic amorphous a-Ni_xSi_1-x films, located just above the metal-insulator transition (MIT). Using various techniques, the MIT was identified. Electron-electron interactions dominated the conductivity, where σ ≈ σ (0) + CT^0.55. Strong spin-orbit scattering was important in the weak-localization contribution to the magnetoconductance data for the metallic films. The inelastic scattering time was extracted from the magnetoconductance data. The low-temperature magnetoconductance data versus Ni content x exhibited a negative maximum just above the critical concentration x_c, suggesting another technique for identifying the MIT.

Original language	English
Pages (from-to)	5395-5411
Number of pages	17
Journal	Journal of Physics Condensed Matter
Volume	9
Issue number	25
DOIs	https://doi.org/10.1088/0953-8984/9/25/008
State	Published - 23 Jun 1997

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Rosenbaum, R., Heines, A., Palevski, A., Karpovski, M., Gladkikh, A., Pilosof, M., Daneshvar, A. J., Graham, M. R., Wright, T., Nicholls, J. T., Adkins, C. J., Witcomb, M., Prozesky, V., Przybylowicz, W., & Pretorius, R. (1997). Metallic transport properties of amorphous nickel-silicon films. Journal of Physics Condensed Matter, 9(25), 5395-5411. https://doi.org/10.1088/0953-8984/9/25/008

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title = "Metallic transport properties of amorphous nickel-silicon films",

abstract = "Transport properties including conductivity and magnetoconductance have been measured for amorphous nickel-silicon films. This study focuses on metallic amorphous a-NixSi1-x films, located just above the metal-insulator transition (MIT). Using various techniques, the MIT was identified. Electron-electron interactions dominated the conductivity, where σ ≈ σ (0) + CT0.55. Strong spin-orbit scattering was important in the weak-localization contribution to the magnetoconductance data for the metallic films. The inelastic scattering time was extracted from the magnetoconductance data. The low-temperature magnetoconductance data versus Ni content x exhibited a negative maximum just above the critical concentration xc, suggesting another technique for identifying the MIT.",

author = "R. Rosenbaum and A. Heines and A. Palevski and M. Karpovski and A. Gladkikh and M. Pilosof and Daneshvar, {A. J.} and Graham, {M. R.} and T. Wright and Nicholls, {J. T.} and Adkins, {C. J.} and M. Witcomb and V. Prozesky and W. Przybylowicz and R. Pretorius",

year = "1997",

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doi = "10.1088/0953-8984/9/25/008",

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Rosenbaum, R, Heines, A, Palevski, A, Karpovski, M, Gladkikh, A, Pilosof, M, Daneshvar, AJ, Graham, MR, Wright, T, Nicholls, JT, Adkins, CJ, Witcomb, M, Prozesky, V, Przybylowicz, W & Pretorius, R 1997, 'Metallic transport properties of amorphous nickel-silicon films', Journal of Physics Condensed Matter, vol. 9, no. 25, pp. 5395-5411. https://doi.org/10.1088/0953-8984/9/25/008

TY - JOUR

T1 - Metallic transport properties of amorphous nickel-silicon films

AU - Rosenbaum, R.

AU - Heines, A.

AU - Palevski, A.

AU - Karpovski, M.

AU - Gladkikh, A.

AU - Pilosof, M.

AU - Daneshvar, A. J.

AU - Graham, M. R.

AU - Wright, T.

AU - Nicholls, J. T.

AU - Adkins, C. J.

AU - Witcomb, M.

AU - Prozesky, V.

AU - Przybylowicz, W.

AU - Pretorius, R.

PY - 1997/6/23

Y1 - 1997/6/23

N2 - Transport properties including conductivity and magnetoconductance have been measured for amorphous nickel-silicon films. This study focuses on metallic amorphous a-NixSi1-x films, located just above the metal-insulator transition (MIT). Using various techniques, the MIT was identified. Electron-electron interactions dominated the conductivity, where σ ≈ σ (0) + CT0.55. Strong spin-orbit scattering was important in the weak-localization contribution to the magnetoconductance data for the metallic films. The inelastic scattering time was extracted from the magnetoconductance data. The low-temperature magnetoconductance data versus Ni content x exhibited a negative maximum just above the critical concentration xc, suggesting another technique for identifying the MIT.

AB - Transport properties including conductivity and magnetoconductance have been measured for amorphous nickel-silicon films. This study focuses on metallic amorphous a-NixSi1-x films, located just above the metal-insulator transition (MIT). Using various techniques, the MIT was identified. Electron-electron interactions dominated the conductivity, where σ ≈ σ (0) + CT0.55. Strong spin-orbit scattering was important in the weak-localization contribution to the magnetoconductance data for the metallic films. The inelastic scattering time was extracted from the magnetoconductance data. The low-temperature magnetoconductance data versus Ni content x exhibited a negative maximum just above the critical concentration xc, suggesting another technique for identifying the MIT.

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Metallic transport properties of amorphous nickel-silicon films

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