Metal-insulator transition in amorphous Si1-xNix: Evidence for Mott’s minimum metallic conductivity

A. Möbius, C. Frenzel, R. Thielsch, R. Rosenbaum, C. J. Adkins, M. Schreiber, H. D. Bauer, R. Grötzschel, V. Hoffmann, T. Krieg, N. Matz, H. Vinzelberg, M. Witcomb

Research output: Contribution to journalArticlepeer-review

34 Scopus citations


We study the metal-insulator transition in two sets of amorphous Si1-xNix films. The sets were prepared by different, electron-beam-evaporation-based technologies: evaporation of the alloy, and gradient deposition from separate Ni and Si crucibles. The characterization included electron and scanning tunneling microscopy, glow discharge optical emission spectroscopy, energy dispersive x-ray analysis, and Rutherford back scattering. Investigating the logarithmic temperature derivative of the conductivity, w = d ln ρ/d ln T, we observe that, for insulating samples, w(T) shows a minimum, increasing at both low and high T. Both the minimum value of w and the corresponding temperature seem to tend to zero as the transition is approached. The analysis of this feature of w(T, x) leads to the conclusion that the transition in Si1-xNix is very likely discontinuous at zero temperature in agreement with Mott’s original views.

Original languageEnglish
Pages (from-to)14209-14223
Number of pages15
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number20
StatePublished - 1999


Dive into the research topics of 'Metal-insulator transition in amorphous Si1-xNix: Evidence for Mott’s minimum metallic conductivity'. Together they form a unique fingerprint.

Cite this