Metal-insulator-semiconductor tunneling microscope: Two-dimensional dopant profiling of semiconductors with conducting atomic-force microscopy

S. Richter, M. Geva, J. P. Garno, R. N. Kleiman

Research output: Contribution to journalArticlepeer-review

Abstract

A method for two-dimensional carrier profiling is presented, based on tunneling from a conducting atomic-force microscope (AFM) probe tip to a semiconductor sample. Current-voltage data are taken during the AFM scan on a cross-sectioned sample consisting of epitaxial InP multilayers. The results show a clear dependence of the current-voltage characteristics on the carrier concentration and different behavior for n- and p-type InP. Modeling of the data enables one to use this method as a quantitative tool for high-resolution two-dimensional dopant profiling.

Original languageEnglish
Pages (from-to)456-458
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number3
DOIs
StatePublished - 17 Jul 2000
Externally publishedYes

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