Mechanisms of double magnetic exchange in dilute magnetic semiconductors

V. Fleurov; K. Kikoin; V. A. Ivanov; P. M. Krstajić; F. M. Peeters

doi:10.1016/j.jmmm.2003.12.1067

Mechanisms of double magnetic exchange in dilute magnetic semiconductors

V. Fleurov^*, K. Kikoin, V. A. Ivanov, P. M. Krstajić, F. M. Peeters

^*Corresponding author for this work

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

Abstract

A microscopic Hamiltonian for interacting manganese impurities in dilute magnetic semiconductors (DMS) is derived. It is shown that in p-type III-V DMS, the indirect exchange between Mn impurities has similarities with the Zener mechanism in transition metal oxides. Here the mobile and localized holes near the top of the valence band play the role of unoccupied p-orbitals which induce ferromagnetism. T_c estimated from the proposed kinematic exchange agrees with experiments on (Ga,Mn)As. The model is also applicable to the p-doped (Ga,Mn)P system. The magnetic ordering in n-type (Ga,Mn)N is due to exchange between the electrons localized on the levels lying deep in the forbidden energy gap. This mechanism is even closer to the original Zener mechanism.

Original language	English
Pages (from-to)	1967-1968
Number of pages	2
Journal	Journal of Magnetism and Magnetic Materials
Volume	272-276
Issue number	III
DOIs	https://doi.org/10.1016/j.jmmm.2003.12.1067
State	Published - May 2004

Keywords

Dilute alloy
Double exchange
Ferromagnetic semiconductor

Access to Document

10.1016/j.jmmm.2003.12.1067

Cite this

@article{46c83f3e17874f9493311ef44d747be6,

title = "Mechanisms of double magnetic exchange in dilute magnetic semiconductors",

abstract = "A microscopic Hamiltonian for interacting manganese impurities in dilute magnetic semiconductors (DMS) is derived. It is shown that in p-type III-V DMS, the indirect exchange between Mn impurities has similarities with the Zener mechanism in transition metal oxides. Here the mobile and localized holes near the top of the valence band play the role of unoccupied p-orbitals which induce ferromagnetism. Tc estimated from the proposed kinematic exchange agrees with experiments on (Ga,Mn)As. The model is also applicable to the p-doped (Ga,Mn)P system. The magnetic ordering in n-type (Ga,Mn)N is due to exchange between the electrons localized on the levels lying deep in the forbidden energy gap. This mechanism is even closer to the original Zener mechanism.",

keywords = "Dilute alloy, Double exchange, Ferromagnetic semiconductor",

author = "V. Fleurov and K. Kikoin and Ivanov, {V. A.} and Krstaji{\'c}, {P. M.} and Peeters, {F. M.}",

note = "Funding Information: This work was supported by FWP-Vl and IPS.",

year = "2004",

month = may,

doi = "10.1016/j.jmmm.2003.12.1067",

language = "אנגלית",

volume = "272-276",

pages = "1967--1968",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

number = "III",

}

TY - JOUR

T1 - Mechanisms of double magnetic exchange in dilute magnetic semiconductors

AU - Fleurov, V.

AU - Kikoin, K.

AU - Ivanov, V. A.

AU - Krstajić, P. M.

AU - Peeters, F. M.

N1 - Funding Information: This work was supported by FWP-Vl and IPS.

PY - 2004/5

Y1 - 2004/5

N2 - A microscopic Hamiltonian for interacting manganese impurities in dilute magnetic semiconductors (DMS) is derived. It is shown that in p-type III-V DMS, the indirect exchange between Mn impurities has similarities with the Zener mechanism in transition metal oxides. Here the mobile and localized holes near the top of the valence band play the role of unoccupied p-orbitals which induce ferromagnetism. Tc estimated from the proposed kinematic exchange agrees with experiments on (Ga,Mn)As. The model is also applicable to the p-doped (Ga,Mn)P system. The magnetic ordering in n-type (Ga,Mn)N is due to exchange between the electrons localized on the levels lying deep in the forbidden energy gap. This mechanism is even closer to the original Zener mechanism.

AB - A microscopic Hamiltonian for interacting manganese impurities in dilute magnetic semiconductors (DMS) is derived. It is shown that in p-type III-V DMS, the indirect exchange between Mn impurities has similarities with the Zener mechanism in transition metal oxides. Here the mobile and localized holes near the top of the valence band play the role of unoccupied p-orbitals which induce ferromagnetism. Tc estimated from the proposed kinematic exchange agrees with experiments on (Ga,Mn)As. The model is also applicable to the p-doped (Ga,Mn)P system. The magnetic ordering in n-type (Ga,Mn)N is due to exchange between the electrons localized on the levels lying deep in the forbidden energy gap. This mechanism is even closer to the original Zener mechanism.

KW - Dilute alloy

KW - Double exchange

KW - Ferromagnetic semiconductor

UR - http://www.scopus.com/inward/record.url?scp=21044431596&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2003.12.1067

DO - 10.1016/j.jmmm.2003.12.1067

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:21044431596

SN - 0304-8853

VL - 272-276

SP - 1967

EP - 1968

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - III

ER -

Mechanisms of double magnetic exchange in dilute magnetic semiconductors

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this