Mechanism of fast current interruption in p-π-n diodes for nanosecond opening switches in high-voltage-pulse applications

Step-recovery diodes operating in the snappy recovery regime are used as opening switches for generating narrow pulses with high-voltage amplitude. Physical modeling of the switching process is complex due to the large number of parameters involved, including diode structure, the extreme physical conditions, and the effect of external driving conditions. In this work, we address the problem by using a physical device simulator for solving the coupled device and electrical driving circuit equations. This method allows deciphering of the physical processes to take place in the diode during the fast current interruption phase. Herein we analyze the complete hard (snappy) reverse recovery process in short-base devices and determine the fast-transition-phase mechanism. It was found that the fast current interruption phase is constructed of two processes; the main parameters governing the switching time duration and the prepulse magnitude are the diode's reverse current density and its base-doping concentration. We describe the dependence of the switching performance in these parameters.