Measurements and sensitivities of LWR in poly spacers

Guy Ayal, Eitan Shauly, Shimon Levi, Amit Siany, Ofer Adan, Yosi Shacham-Diamand

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

LER and LWR have long been considered a primary issue in process development and monitoring. Development of a low power process flavors emphasizes the effect of LER, LWR on different aspects of the device. Gate level performance, particularly leakage current at the front end of line, resistance and reliability in the back-end layers. Traditionally as can be seen in many publications, for the front end of line the focus is mainly on Poly and Active area layers. Poly spacers contribution to the gate leakage, for example, is rarely discussed. Following our research done on sources of gate leakage, we found leakage current (Ioff) in some processes to be highly sensitive to changes in the width of the Poly spacers - even more strongly to the actual Poly gate CDs. Therefore we decided to measure Poly spacers LWR, its correlation to the LWR in the poly, and its sensitivity to changes in layout and OPC. In our last year publication, we defined the terms LLER (Local Line Edge Roughness) and LLWR (Local Line Width Roughness). The local roughness is measured as the 3-sigma value of the line edge/width in a 5-nm segment around the measurement point. We will use these terms in this paper to evaluate the Poly roughness impact on Poly spacer's roughness. A dedicated test chip was designed for the experiments, having various transistors layout configurations with different densities to cover the all range of process design rules. Applied Materials LER and LWR innovative algorithms were used to measure and characterize the spacer roughness relative to the distance from the active edges and from other spaces. To accurately measure all structures in a reasonable time, the recipes were automatically generated from CAD. On silicon, after poly spacers generation, the transistors no longer resemble the Poly layer CAD layout, their morphology is different compared with Photo/Etch traditional structures , and dimensions vary significantly. In this paper we present metrology and characterization of poly spacer LLWR and LLER compared to that of the poly gate in various transistor shapes, showing that the relation between them depends on the transistor architecture (final layout, including OPC). We will show how the spacer deposition may reduce, keep or even enlarge the roughness measured on Poly, depending on transistor layout , but surprisingly, not dependent on proximity effects.

Original languageEnglish
Title of host publicationMetrology, Inspection, and Process Control for Microlithography XXIV
DOIs
StatePublished - 2010
EventMetrology, Inspection, and Process Control for Microlithography XXIV - San Jose, CA, United States
Duration: 22 Feb 201025 Feb 2010

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7638
ISSN (Print)0277-786X

Conference

ConferenceMetrology, Inspection, and Process Control for Microlithography XXIV
Country/TerritoryUnited States
CitySan Jose, CA
Period22/02/1025/02/10

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