Measurement of the electrostatic edge effect in wurtzite GaN nanowires

Alex Henning, Benjamin Klein, Kris A. Bertness, Paul T. Blanchard, Norman A. Sanford, Yossi Rosenwaks

Research output: Contribution to journalArticlepeer-review

Abstract

The electrostatic effect of the hexagonal corner on the electronic structure in wurtzite GaN nanowires (NWs) was directly measured using Kelvin probe force microscopy (KPFM). By correlating electrostatic simulations with the measured potential difference between the nanowire face and the hexagonal vertices, the surface state concentration and band bending of GaN NWs were estimated. The surface band bending is important for an efficient design of high electron mobility transistors and for opto-electronic devices based on GaN NWs. This methodology provides a way to extract NW parameters without making assumptions concerning the electron affinity. We are taking advantage of electrostatic modeling and the high precision that KPFM offers to circumvent a major source of uncertainty in determining the surface band bending.

Original languageEnglish
Article number213107
JournalApplied Physics Letters
Volume105
Issue number21
DOIs
StatePublished - 24 Nov 2014

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