Measurement and model of the infrared two-photon emission spectrum of GaAs

Alex Hayat; Pavel Ginzburg; Meir Orenstein

doi:10.1103/PhysRevLett.103.023601

Measurement and model of the infrared two-photon emission spectrum of GaAs

Alex Hayat, Pavel Ginzburg, Meir Orenstein

Research output: Contribution to journal › Article › peer-review

Abstract

Two-photon emission from semiconductors was recently observed, but not fully interpreted. We develop a dressed-state model incorporating intraband scattering-related level broadening, yielding nondivergent emission rates. The spectrum calculations for high carrier concentrations including the time dependence of the screening buildup correspond well to our measured two-photon emission spectrum from GaAs.

Original language	English
Article number	023601
Journal	Physical Review Letters
Volume	103
Issue number	2
DOIs	https://doi.org/10.1103/PhysRevLett.103.023601
State	Published - 6 Aug 2009
Externally published	Yes

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10.1103/PhysRevLett.103.023601

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@article{e65eb45866d2437ebd69f59292e5d095,

title = "Measurement and model of the infrared two-photon emission spectrum of GaAs",

abstract = "Two-photon emission from semiconductors was recently observed, but not fully interpreted. We develop a dressed-state model incorporating intraband scattering-related level broadening, yielding nondivergent emission rates. The spectrum calculations for high carrier concentrations including the time dependence of the screening buildup correspond well to our measured two-photon emission spectrum from GaAs.",

author = "Alex Hayat and Pavel Ginzburg and Meir Orenstein",

year = "2009",

month = aug,

day = "6",

doi = "10.1103/PhysRevLett.103.023601",

language = "אנגלית",

volume = "103",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "2",

}

TY - JOUR

T1 - Measurement and model of the infrared two-photon emission spectrum of GaAs

AU - Hayat, Alex

AU - Ginzburg, Pavel

AU - Orenstein, Meir

PY - 2009/8/6

Y1 - 2009/8/6

N2 - Two-photon emission from semiconductors was recently observed, but not fully interpreted. We develop a dressed-state model incorporating intraband scattering-related level broadening, yielding nondivergent emission rates. The spectrum calculations for high carrier concentrations including the time dependence of the screening buildup correspond well to our measured two-photon emission spectrum from GaAs.

AB - Two-photon emission from semiconductors was recently observed, but not fully interpreted. We develop a dressed-state model incorporating intraband scattering-related level broadening, yielding nondivergent emission rates. The spectrum calculations for high carrier concentrations including the time dependence of the screening buildup correspond well to our measured two-photon emission spectrum from GaAs.

UR - http://www.scopus.com/inward/record.url?scp=68749087431&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.103.023601

DO - 10.1103/PhysRevLett.103.023601

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:68749087431

VL - 103

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 2

M1 - 023601

ER -

Measurement and model of the infrared two-photon emission spectrum of GaAs

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