Mean inner potential of elemental crystals from density-functional theory calculations: Efficient computation and trends

The mean inner potential (V₀) of crystals plays an important role in electron microscopy. In a few cases, it has been measured experimentally, using mostly electron holography; however, it is not uncommon to find reports that disagree by a few volts regarding the mean inner potential of the same material. Different levels of theory have also been used to estimate its value, often by building the crystal as a superposition of isolated atoms or ions—an independent-atom approximation that does not take bonding into account. In a few cases, density-functional theory (DFT) calculations were done to capture such bonding, frequently using computer-intensive all-electron approaches. In this article, we describe in detail a faster implementation based on postprocessing files produced by a DFT code that relies on the projector-augmented wave method. We deployed this approach to compute values of V₀ for 44 elemental solids, and we provide the first quantum-mechanical calculation of the mean inner potential beyond the independent-atom approximation for many of them. We also report instances in which different surface terminations for the same material led to differences in V₀ of more than 3 V, highlighting the dependence of the mean inner potential on the boundary conditions of the sample. Finally, by comparing our values of V₀ with other material properties, we show that it correlates mostly linearly with the mass density, that it can be used to compute a good approximation to the orbital diamagnetic contribution to the magnetic susceptibility, and that it provides a simple route to compute atomic scattering amplitudes for forward scattering of electrons.