Material properties of very thin electroless silver-tungsten films

V. Bogush; A. Inberg; N. Croitoru; V. Dubin; Y. Shacham-Diamand

doi:10.1016/S0040-6090(03)00058-0

Material properties of very thin electroless silver-tungsten films

V. Bogush^*, A. Inberg, N. Croitoru, V. Dubin, Y. Shacham-Diamand

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Thin electroless silver-tungsten (Ag-W) films were deposited on silicon dioxide substrate from the benzoate solution. The layer composition and microstructure as well as the film deposition rate were studied as a function of the bath formulation. The tungsten concentration in the deposit was up to ∼ 2.1 atm% with corresponding oxygen concentration approximately 4 atm%. It was found that electrical, optical, and mechanical properties of Ag-W films depend on the W content in the deposit. Ag-W films of sub 120 nm thickness with ∼ 0.6 atm% tungsten and 1.8 atm% oxygen have demonstrated the resistivity of ∼ 4 μΩ·cm. Finally, the possibility to use the Ag-W thin films for microelectronic metallization is discussed.

Original language	English
Pages (from-to)	288-295
Number of pages	8
Journal	Thin Solid Films
Volume	426
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(03)00058-0
State	Published - 24 Feb 2003

Keywords

Electroless deposition
Metallization
Silver
Tungsten

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10.1016/S0040-6090(03)00058-0

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title = "Material properties of very thin electroless silver-tungsten films",

abstract = "Thin electroless silver-tungsten (Ag-W) films were deposited on silicon dioxide substrate from the benzoate solution. The layer composition and microstructure as well as the film deposition rate were studied as a function of the bath formulation. The tungsten concentration in the deposit was up to ∼ 2.1 atm% with corresponding oxygen concentration approximately 4 atm%. It was found that electrical, optical, and mechanical properties of Ag-W films depend on the W content in the deposit. Ag-W films of sub 120 nm thickness with ∼ 0.6 atm% tungsten and 1.8 atm% oxygen have demonstrated the resistivity of ∼ 4 μΩ·cm. Finally, the possibility to use the Ag-W thin films for microelectronic metallization is discussed.",

keywords = "Electroless deposition, Metallization, Silver, Tungsten",

author = "V. Bogush and A. Inberg and N. Croitoru and V. Dubin and Y. Shacham-Diamand",

note = "Funding Information: Authors would like to thank the Semiconductor Research Corporation for support of this research (Contract 2001-MJ-944). Also thanks to Dr Larisa Burschstein and Dr Zahava Barkay from the Wolfson Material Center at Tel-Aviv University",

year = "2003",

month = feb,

day = "24",

doi = "10.1016/S0040-6090(03)00058-0",

language = "אנגלית",

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journal = "Thin Solid Films",

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T1 - Material properties of very thin electroless silver-tungsten films

AU - Bogush, V.

AU - Inberg, A.

AU - Croitoru, N.

AU - Dubin, V.

AU - Shacham-Diamand, Y.

N1 - Funding Information: Authors would like to thank the Semiconductor Research Corporation for support of this research (Contract 2001-MJ-944). Also thanks to Dr Larisa Burschstein and Dr Zahava Barkay from the Wolfson Material Center at Tel-Aviv University

PY - 2003/2/24

Y1 - 2003/2/24

N2 - Thin electroless silver-tungsten (Ag-W) films were deposited on silicon dioxide substrate from the benzoate solution. The layer composition and microstructure as well as the film deposition rate were studied as a function of the bath formulation. The tungsten concentration in the deposit was up to ∼ 2.1 atm% with corresponding oxygen concentration approximately 4 atm%. It was found that electrical, optical, and mechanical properties of Ag-W films depend on the W content in the deposit. Ag-W films of sub 120 nm thickness with ∼ 0.6 atm% tungsten and 1.8 atm% oxygen have demonstrated the resistivity of ∼ 4 μΩ·cm. Finally, the possibility to use the Ag-W thin films for microelectronic metallization is discussed.

AB - Thin electroless silver-tungsten (Ag-W) films were deposited on silicon dioxide substrate from the benzoate solution. The layer composition and microstructure as well as the film deposition rate were studied as a function of the bath formulation. The tungsten concentration in the deposit was up to ∼ 2.1 atm% with corresponding oxygen concentration approximately 4 atm%. It was found that electrical, optical, and mechanical properties of Ag-W films depend on the W content in the deposit. Ag-W films of sub 120 nm thickness with ∼ 0.6 atm% tungsten and 1.8 atm% oxygen have demonstrated the resistivity of ∼ 4 μΩ·cm. Finally, the possibility to use the Ag-W thin films for microelectronic metallization is discussed.

KW - Electroless deposition

KW - Metallization

KW - Silver

KW - Tungsten

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AN - SCOPUS:0037463313

SN - 0040-6090

VL - 426

SP - 288

EP - 295

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Material properties of very thin electroless silver-tungsten films

Abstract

Keywords

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