Abstract
Thin electroless silver-tungsten (Ag-W) films were deposited on silicon dioxide substrate from the benzoate solution. The layer composition and microstructure as well as the film deposition rate were studied as a function of the bath formulation. The tungsten concentration in the deposit was up to ∼ 2.1 atm% with corresponding oxygen concentration approximately 4 atm%. It was found that electrical, optical, and mechanical properties of Ag-W films depend on the W content in the deposit. Ag-W films of sub 120 nm thickness with ∼ 0.6 atm% tungsten and 1.8 atm% oxygen have demonstrated the resistivity of ∼ 4 μΩ·cm. Finally, the possibility to use the Ag-W thin films for microelectronic metallization is discussed.
Original language | English |
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Pages (from-to) | 288-295 |
Number of pages | 8 |
Journal | Thin Solid Films |
Volume | 426 |
Issue number | 1-2 |
DOIs | |
State | Published - 24 Feb 2003 |
Keywords
- Electroless deposition
- Metallization
- Silver
- Tungsten