@article{3978a8e5bdcc4cda9978c0d4ea950623,
title = "Material properties of very thin electroless silver-tungsten films",
abstract = "Thin electroless silver-tungsten (Ag-W) films were deposited on silicon dioxide substrate from the benzoate solution. The layer composition and microstructure as well as the film deposition rate were studied as a function of the bath formulation. The tungsten concentration in the deposit was up to ∼ 2.1 atm% with corresponding oxygen concentration approximately 4 atm%. It was found that electrical, optical, and mechanical properties of Ag-W films depend on the W content in the deposit. Ag-W films of sub 120 nm thickness with ∼ 0.6 atm% tungsten and 1.8 atm% oxygen have demonstrated the resistivity of ∼ 4 μΩ·cm. Finally, the possibility to use the Ag-W thin films for microelectronic metallization is discussed.",
keywords = "Electroless deposition, Metallization, Silver, Tungsten",
author = "V. Bogush and A. Inberg and N. Croitoru and V. Dubin and Y. Shacham-Diamand",
note = "Funding Information: Authors would like to thank the Semiconductor Research Corporation for support of this research (Contract 2001-MJ-944). Also thanks to Dr Larisa Burschstein and Dr Zahava Barkay from the Wolfson Material Center at Tel-Aviv University",
year = "2003",
month = feb,
day = "24",
doi = "10.1016/S0040-6090(03)00058-0",
language = "אנגלית",
volume = "426",
pages = "288--295",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier B.V.",
number = "1-2",
}