Material properties of very thin electroless silver-tungsten films

V. Bogush*, A. Inberg, N. Croitoru, V. Dubin, Y. Shacham-Diamand

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Thin electroless silver-tungsten (Ag-W) films were deposited on silicon dioxide substrate from the benzoate solution. The layer composition and microstructure as well as the film deposition rate were studied as a function of the bath formulation. The tungsten concentration in the deposit was up to ∼ 2.1 atm% with corresponding oxygen concentration approximately 4 atm%. It was found that electrical, optical, and mechanical properties of Ag-W films depend on the W content in the deposit. Ag-W films of sub 120 nm thickness with ∼ 0.6 atm% tungsten and 1.8 atm% oxygen have demonstrated the resistivity of ∼ 4 μΩ·cm. Finally, the possibility to use the Ag-W thin films for microelectronic metallization is discussed.

Original languageEnglish
Pages (from-to)288-295
Number of pages8
JournalThin Solid Films
Issue number1-2
StatePublished - 24 Feb 2003


  • Electroless deposition
  • Metallization
  • Silver
  • Tungsten


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