Maskless Device Fabrication and Laser-Induced Doping in MoS2Field Effect Transistors Using a Thermally Activated Cyclic Polyphthalaldehyde Resist

Alonit Kafri, Debopriya Dutta, Subhrajit Mukherjee, Pranab K. Mohapatra, Ariel Ismach, Elad Koren

Research output: Contribution to journalArticlepeer-review

Abstract

We present a novel maskless device fabrication technique for rapid prototyping of two-dimensional (2D)-based electronic materials. The technique is based on a thermally activated and self-developed cyclic polyphthalaldehyde (c-PPA) resist using a commercial Raman system and 532 nm laser illumination. Following the successful customization of electrodes to form field effect transistors based on MoS2 monolayers, the laser-induced electronic doping of areas beneath the metal contacts that were exposed during lithography was investigated using both surface potential mapping and device characterization. An effective change in the doping level was introduced depending on the laser intensity, i.e., low laser powers resulted in p-doping, while high laser powers resulted in n-doping. Fabricated devices present a low contact resistance down to 10 kω·μm at a back-gate voltage of VG = 80 V, which is attributed to the laser-induced n-type doping at the metal contact regions.

Original languageEnglish
Pages (from-to)5399-5405
Number of pages7
JournalACS Applied Materials and Interfaces
Volume13
Issue number4
DOIs
StatePublished - 3 Feb 2021

Keywords

  • MoS
  • PPA
  • doping
  • field effect transistor
  • maskless lithography

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