Mapping structures for flash memories: Techniques and open problems

Eran Gal, Sivan Toledo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Flash memory is a type of electrically erasable programmable read-only memory (EEPROM). Because flash memories are nonvolatile and relatively dense, they are now used to store files and other persistent objects in handheld computers, mobile phones, digital cameras, portable music players, and many other computer systems in which magnetic disks are inappropriate. Flash, like earlier EEPROM devices, suffers from two limitations. First, bits can only be cleared by erasing a large block of memory. Second, each block can only sustain a limited number of erasures, after which it can no longer reliably store data. Due to these limitations, sophisticated data structures and algorithms are required to effectively use flash memories. These algorithms and data structures support efficient not-in-place updates of data, reduce the number of erasures, and level the wear of the blocks in the device. This survey presents these algorithms and data structures as well as open theoretical problems that arise in this area.

Original languageEnglish
Title of host publicationProceedings - IEEE International Conference on Software - Science, Technology and Engineering 2005, SwSTE '05
Pages83-92
Number of pages10
DOIs
StatePublished - 2005
EventIEEE International Conference on Software - Science, Technology and Engineering 2005 - Herzlia, Israel
Duration: 22 Feb 200523 Feb 2005

Publication series

NameProceedings - IEEE International Conference on Software - Science, Technology and Engineering 2005, SwSTE '05
Volume2005

Conference

ConferenceIEEE International Conference on Software - Science, Technology and Engineering 2005
Country/TerritoryIsrael
CityHerzlia
Period22/02/0523/02/05

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