Magnetoresistance of an insulating amorphous nickel-silicon film in large magnetic fields

R. Rosenbaum*, A. Milner, S. Hannahs, T. Murphy, E. Palm, B. Brandt

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

High magnetic field measurements for the magnetoresistance ratios R(B, T)/R(0, T) have been made on an insulating amorphous nickel-silicon thin film. In zero field, the resistance of this insulating film exhibits a `soft gap' variable-range hopping law in the liquid helium temperature region. In small fields, negative magnetoresistance values are observed, which can be explained using the forward interference (orbital momentum) theory. In intermediate and large fields, the magnetoresistance is positive and large and can be explained using the wave function shrinkage theory. A phenomenological model incorporating both processes gives very acceptable fits to the experimental data.

Original languageEnglish
Pages (from-to)340-342
Number of pages3
JournalPhysica B: Condensed Matter
Volume294-295
DOIs
StatePublished - Jan 2001

Funding

FundersFunder number
State of Florida
National Science FoundationDMR-9527035
Tel Aviv University

    Fingerprint

    Dive into the research topics of 'Magnetoresistance of an insulating amorphous nickel-silicon film in large magnetic fields'. Together they form a unique fingerprint.

    Cite this